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Figure 6.11 shows the execution procedure when the programming/erase control program is
transferred to on-chip RAM.
Notes:
Do not apply a constant high level to the FWE pin. A high level should be applied to the
FWE pin only when programming or erasing flash memory. Also, while a high level is
applied to the FWE pin, the watchdog timer should be activated to prevent overprogramming
or overerasing due to program runaway, etc.
* For further information on FWE application and disconnection, see section 6.9, Flash
Memory Programming and Erasing Precautions.
Figure 6.11 User Program Mode Execution Procedure
Write FWE assessment program and transfer
program (and programming/erase control
program if necessary) beforehand
TEST2 = 1, TEST = 0
Reset start
Transfer programming/erase
control program to RAM
Branch to programming/erase
control program in RAM area
FWE = high*
Execute programming/erase control
program in RAM (flash memory rewriting)
Release FWE*
Branch to application program
in flash memory
Rev.3.00 Jul. 19, 2007 page 139 of 532
6. ROM
REJ09B0397-0300
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