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2.2.1 General
Registers
Figure 2.2 Stack
Pointer
4.3 Subclock
Generator
Table 4.2 DC
Characteristics and
Timing
6.2.1 Features
6.5.4 Erase-Verify
Mode
Main Revisions for This Edition
Page
Revision (See Manual for Details)
⎯
•
Company name and brand names amended
(Before) Hitachi, Ltd. → (After) Renesas Technology Corp.
•
Designation for categories amended
(Before) H8/3857 Series → (After) H8/3857 Group
(Before) H8/3854 Series → (After) H8/3854 Group
29
Figure amended
SP (R7)
98
Table condition amended
(V
= 2.7 V to 5.5 V of the mask ROM version of H8/3852,
CC
H8/3853, and H8/3854, V
H8/3857 Group, AV
T
= –20°C to + 75°C*, unless otherwise specified, including
a
subactive mode)
Table note amended
Note: * The guaranteed temperature as an electrical
characteristic for die type products is 75°C.
120
Description amended
•
Programming/erase methods
The flash memory is programmed 32 bytes at a time. Erasing is
performed in block units. To erase multiple blocks, each block
must be erased in turn. In block erasing, 1-kbyte, 28-kbyte, 16-
kbyte, and 12-kbyte blocks can be set arbitrarily.
143
Description amended
After the elapse of the erase time, erase mode is exited (the E
bit in FLMCR1 is cleared, then the ESU bit in FLMCR2 is
cleared at least (α) μs later).
Lower address side [H'0000]
Upper address side [H'FFFF]
= 3.0 V to 5.5 V of H8/3854F and
CC
= 3.0 V to 5.5 V, V
CC
SS
Rev.3.00 Jul. 19, 2007 Page vii of xxiv
Unused area
Stack area
= AV
= 0.0 V,
SS
REJ09B0397-0300
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