Texas Instruments SimpleLink CC2620 Technical Reference Manual page 750

Factory Configuration (FCFG)
9.2.1.31 FLASH_EH_SEQ Register (Offset = 17Ch) [reset = 200F000h]
FLASH_EH_SEQ is shown in
Flash Erase Hold and Sequence
31 30 29 28
15 14 13 12
VSTAT
R-Fh
Bit Field
31-24 EH
23-16 SEQ
15-12 VSTAT
11-0 SM_FREQUENCY
750
Device Configuration
Figure 9-53 and described in
Figure 9-53. FLASH_EH_SEQ Register
27 26 25
EH
R-2h
11 10 9
Table 9-55. FLASH_EH_SEQ Register Field Descriptions
Type Reset
R 2h
R 0h
R Fh
R 0h
Copyright © 2015, Texas Instruments Incorporated
Table 9-55.
24 23 22 21
8 7 6 5
SM_FREQUENCY
R-0h
Description
Erase hold time in half-microseconds after SAFELV goes low. Value
will be converted to number of FCLK cycles by the flash device
driver and the converted value is written to
FLASH:FSM_ERA_OH.ERA_OH when an erase/program operation
is initiated.
Pump sequence control.
Max number of HCLK cycles allowed for pump brown-out. Value will
be written to FLASH:FSM_VSTAT.VSTAT_CNT when an
erase/program operation is initiated.
Max FCLK frequency allowed for program, erase, and verify reads.
SWCU117C – February 2015 – Revised September 2015
www.ti.com
20 19 18 17
SEQ
R-0h
4 3 2 1
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