Flash Memory Characteristics; Table 21.8 Flash Memory Characteristics - Renesas H8SX/1500 Series Hardware Manual

21.5

Flash Memory Characteristics

Table 21.8 Flash Memory Characteristics

Conditions: V = 4.5 V to 5.5 V, AV
CC
V = AV
SS
T = 0°C to +85°C (wide-range specifications)
a
Item
1
Programming time*
*
1 2 4
Erase time*
* *
Programming time (total)
1 2 4
* * *
1
Erase time (total) *
*
Programming/erase time
1 2 4
(total) *
* *
Number of programming
4
Data retention time*
Notes: 1. Programming time and erase time depend on data in the flash memory.
2. Programming time and erase time do not include time for data transfer.
3. All the characteristics after programming are guaranteed within this value (guaranteed
value is from 1 to Min. value).
4. Characteristics when programming is performed within the Min. value
= 4.5 V to 5.5 V, AV
CC0
= 0 V, Iφ = 8 to 40 MHz, Pφ = 8 to 35 MHz,
SS
Symbol Min.

2 4
t
*
P

t
E


Σt 
P
Σt 
2 4
*
E
Σt 
PE
N 100*
WEC
t 10
DRP
CC1
Typ. Max.
3 30
80 800
500 5000
1000 10000
5 15
5 15
10 30
 
3
 
Rev. 3.00 Mar. 14, 2006 Page 777 of 804
Section 21 Electrical Characteristics
= 4.5 V to 5.5 V,
Test
Unit Condition
ms/128 bytes
ms/4-kbyte
block
ms/32-kbyte
block
ms/64-kbyte
block
s/256 kbytes T = 25°C,
a
memory filled
with 0.
s/256 kbytes T = 25°C
a
s/256 kbytes T = 25°C
a
Times
Year
REJ09B0104-0300