Renesas H8S/2633 Series Hardware Manual page 270

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(1) Operation Timing for Burst Access (High-Speed Page Mode)
Figure 7-22 shows the operation timing for burst access. When the DRAM space is successively
accessed, the CAS signal and column address output cycle (2 states) are continued as long as the
row address is the same in the preceding and succeeding access cycles. The MXC1 and MXC0
bits of the MCR specify which row address is compared.
A23 to A0
CSn (RAS)
CAS, LCAS
HWR (WE)
Read
D15 to D0
CAS, LCAS
HWR (WE)
Write
D15 to D0
Notes: n=2 to 5
* OE is enabled when OES=1.
Figure 7-22 Operating Timing in High-Speed Page Mode
The bus cycle can also be extended in burst access by inserting wait states. The method and timing
of inserting the wait states is the same as in full access. For details, see section 7.5.8, Wait Control.
216
T
T
p
ø
row
AS
OE *
OE
T
T
r
c1
c2
column1
RCTS= 0
RCTS= 1
T
T
c1
c2
column2

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