Flash Memory Characteristics - Renesas H8/38024 Hardware Manual

16.8.6

Flash Memory Characteristics

Table 16.26 Flash Memory Characteristics
Condition: AV
CC
operating voltage when reading), V
when programming/erasing), T
when programming/erasing: product with regular specifications, product with wide-
range temperature specifications)
Item
Programming time * 1 * 2 *
Erase time * 1 * 3 * 5
Reprogramming count
Data retain period
Programming Wait time after
SWE-bit setting *
Wait time after
PSU-bit setting *
Wait time after
P-bit setting *
Wait time after
P-bit clear *
Wait time after
PSU-bit clear *
Wait time after
PV-bit setting *
Wait time after
dummy write *
Wait time after
PV-bit clear *
Wait time after
SWE-bit clear *
Maximum
programming
count * 1
Rev. 6.00, 08/04, page 504 of 628
= 2.7 V to 5.5 V, V
SS
Symbol
4
t
P
t
E
N
WEC
t
DRP
x
1
y
1
z1
1 * 4
z2
z3
α
1
β
1
γ
1
ε
1
η
1
θ
1
N
* 4 * 5
= AV = 0.0 V, V
SS CC
= 3.0 V to 5.5 V (range of operating voltage
CC
= –20°C to +75°C (range of operating temperature
a
Values
Min Typ Max
— 7 200
— 100 1200
1000 * 8 10000 * 9
—
10 * 10
— —
1 — —
50 — —
28 30 32
198 200 202
8 10 12
5 — —
5 — —
4 — —
2 — —
2 — —
100 — —
— — 1000
= 2.7 V to 5.5 V (range of
Test
Unit
Conditions
ms/128 bytes
ms/block
times
year
µs
µs
1 ≤ n ≤ 6
µs
7 ≤ n ≤ 1000
µs
µs Additional
programming
µs
µs
µs
µs
µs
µs
times