Flash Memory Characteristics - Renesas H8/38024 Hardware Manual

16.4.6

Flash Memory Characteristics

Table 16.13 lists the flash memory characteristics.
Table 16.13 Flash Memory Characteristics
AV = 2.7 V to 3.6 V, V
CC
reading), V = 3.0 V to 3.6 V (operating voltage range in programming/erasing), T
CC
+75°C (operating temperature range in programming/erasing)
Item
Programming time (per 128 bytes) *
Erase time (per block) *
Maximum number of reprogrammings
Data retention time
Programming Wait time after SWE bit setting *
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after dummy write *
Wait time after PV bit clear *
Wait time after SWE bit clear *
Maximum programming count *
* 5
Wait time after SWE bit setting *
Erase
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after dummy write *
Wait time after EV bit clear *
Wait time after SWE bit clear *
Maximum erase count *
= AV = 0.0 V, V
SS SS
1 * 2 * 4
1 3 6
* *
1
1 * 4
1
1
1
1
1
1
1
1
1 * 6
1
1
1
1
1
1
1 * 6 * 7
= 2.7 V to 3.6 V (operating voltage range in
CC
Symbol Min
t —
P
t —
E
N 1000
WEC
* 8 * 11
100
* 8 * 12
10 * 10
t
DRP
1
x 1
y 50
z1 28
z2 198
z3 8
α
5
β
5
γ
4
ε
2
η
2
θ
100
* 4
N —
1
x 1
y 100
z 10
α
10
β
10
γ
20
ε
2
η
4
θ
100
N —
a
Values
Typ Max Unit
7 200 ms
100 1200 ms
10000 — Times
* 9
—
10000
* 9
— — Years
— — µs
— — µs
30 32 µs
200 202 µs
10 12 µs
— — µs
— — µs
— — µs
— — µs
— — µs
— — µs
— 1000 Times
— — µs
— — µs
— 100 ms
— — µs
— — µs
— — µs
— — µs
— — µs
— — µs
— 120 Times
Rev. 6.00, 08/04, page 469 of 628
= –20 to
Test
Condition
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
Additional-
programming