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Notes: 1.
Make the time settings in accordance with the program/erase algorithms.
2.
The programming time for 128 bytes. (Indicates the total time for which the P bit in
flash memory control register 1 (FLMCR1) is set. The program-verify time is not
included.)
3.
The time required to erase one block. (Indicates the time for which the E bit in flash
memory control register 1 (FLMCR1) is set. The erase-verify time is not included.)
4.
Programming time maximum value (t
maximum number of writes (N)
5.
Set the maximum number of writes (N) according to the actual set values of z1, z2,
and z3, so that it does not exceed the programming time maximum value (t
The wait time after P bit setting (z1, z2) should be changed as follows according to the
value of the number of writes (n).
Number of writes (n)
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
6.
Erase time maximum value (t
number of erases (N)
7.
Set the maximum number of erases (N) according to the actual set value of (z), so that
it does not exceed the erase time maximum value (t
8.
The minimum number of times all characteristics are guaranteed following
reprogramming. (The guarantee covers the range from 1 to the minimum value.)
9.
Reference value at 25°C. (Guideline showing number of reprogrammings over which
functioning will be retained under normal circumstances.)
10. Data retention characteristics within the range indicated in the specifications, including
the minimum value for reprogrammings.
11. Applies to an operating voltage range when reading data of 3.0 to 3.6 V.
12. Applies to an operating voltage range when reading data of 2.7 to 3.6 V.
Rev. 6.00, 08/04, page 470 of 628
(MAX)) = wait time after P bit setting (z) ×
P
z1 = 30 µs
z2 = 200 µs
(max)) = wait time after E bit setting (z) × maximum
E
(max)).
E
(MAX)).
P
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