Keithley 4200A-SCS Reference Manual page 608

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Model 4200A-SCS Parameter Analyzer Reference Manual

Section 6: Clarius

Figure 395: Fowler-Nordheim tunneling program and erase

The following figure shows examples of moving charge using HCI. These conditions are examples

with approximate voltage values. The pulse width and pulse height will vary depending on device

structure and process details.

Figure 396: Hot charge injection (HCI) program and erase

The flash projects support two methods for switching between the pulse and measure phases of the

typical flash memory test.

The first is the typical method, using a switch matrix to route the pulse or DC signals to the DUT.

Using the switch matrix is more complicated, but provides flexibility for certain tests and test

structures that use arrays. The second method uses the on-card isolation relays on both the SMUs

and the pulse cards to configure a simpler setup without the external switch matrix.

Because both the SMUs and the pulse cards have isolation relays on the cards, you can configure a

simpler setup without the external switch matrix. The advantage of the simpler setup is lower cost.

However, the switch matrix provides lower current measurement performance and the flexibility

necessary for testing arrays of test structures.

To determine the state of the device, you do a Vg-Id sweep, then perform a calculation to find the

voltage threshold (V

). The shift in V

represents a change in the amount of charge stored in the

floating gate, which indicates the state of the cell from fully programmed (1) to fully erased (0).

4200A-901-01 Rev. C / February 2017