4-Terminal N-Mosfet Tests; 3-Terminal Npn Bjt Tests - Keithley 4200A-SCS Reference Manual

Section 6: Clarius

4-terminal n-MOSFET tests

By default, the following tests use three source-measure units (SMUs) and one ground unit (GNDU),
as shown in the following figure. You can also use four SMUs, one for each device-under-test (DUT)
terminal.
Descriptions of the 4-terminal n-MOSFET tests
vds-id
vtlin
subvt
vgs-id
ig-vg
cv-nmosfet
pulse-vds-id
waveform-meas

3-terminal NPN BJT tests

The tests for this device require three SMUs.
Descriptions of the 3-terminal NPN BJT tests
vce-ic
gummel
vcsat
6-334
This test generates the standard family of drain current versus drain voltage curves on a
FET. For each gate voltage step, the test sweeps the drain voltage and measures the
resulting drain current. This test uses either three or four SMUs that are connected to the
gate, drain, source, and bulk terminals of the FET.
Uses a linear curve fit to find the threshold voltage (V
drain current versus gate voltage data. This test uses three or four SMUs connected to
the gate, drain, source, and bulk terminals of the MOSFET.
Executes an I-V sweep and calculates the subthreshold voltage (sub-V
and plots drain current versus gate voltage. This test uses three or four SMUs connected
to the gate, drain, source, and bulk terminals of the MOSFET.
This test extracts the threshold voltage (V
parameters from a sweep of the drain current versus gate voltage. This test uses either
three or four SMUs connected to the gate, drain, source and bulk terminals of a
MOSFET.
Measures the gate leakage current of the MOSFET as a function of the sweeping gate
voltage. The test determines the gate leakage resistance using a linear line fit.
Measures the capacitance as a function of the gate voltage between the gate terminal
and the drain, source, and bulk terminals tied together. Several parameters are
extracted, including the flatband capacitance, doping density, flatband voltage, and oxide
thickness.
Uses CH1 and CH2 of a PMU to generate a pulse I-V drain family of curves. CH1
outputs a pulse step output to the gate. CH2 outputs a pulsed drain voltage sweep and
measures the drain current.
Uses the waveform capture mode of the PMU to show the time-based response of the
drain current and drain voltage of a MOSFET. CH1 outputs a single pulse to the gate.
CH2 captures the transient response of the drain current and drain voltage.
As the base current is stepped, this test measures the drain current at each point of the
drain voltage sweep. Three SMUs are connected to the base, collector, and emitter
terminals of the BJT.
Generates a Gummel plot as it measures both the base current and collector current of a
BJT. The currents are measured as a function of the base-emitter voltage. Three SMUs
are connected to the base, collector, and emitter terminals of a BJT.
At a constant base current, this test plots the collector current as a function of the
collector voltage. The data is used by the Formulator to calculate the collector saturation
voltage (V ). Three SMUs are connected to the base, collector, and emitter terminals
ce(sat)
of a BJT.
Model 4200A-SCS Parameter Analyzer Reference Manual
) of a MOSFET from the generated
t
) and maximum transconductance (G
t
4200A-901-01 Rev. C / February 2017
) of a MOSFET
t
)
m