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M16C/29 Group
21. Flash Memory Version
21.1 Flash Memory Performance
The flash memory version is functionally the same as the mask ROM version except that it internally con-
tains flash memory.
In the flash memory version, the flash memory can be used in four rewrite mode : CPU rewrite mode,
standard serial I/O mode, parallel I/O mode and CAN I/O.
Table 21.1 shows the flash memory version specifications. (Refer to "Table 1.2.1 Performance Outline of
M16C/29 Group (80-pin device)" for the items not listed in Table 21.1." or "Table 1.2.2 Performance Outline
of M16C/29 Group (64-pin device)").
Table 21.1. Flash Memory Version Specifications
Flash memory operating mode
Erase block
Program method
Erase method
Program, erase control method
Protect method
Number of commands
Block 0 to 5 (program area)
Program/Erase
Endurance(Note1)
Block A and B (data are) (Note2)
Data Retention
ROM code protection
Note 1: Program and erase endurance definition
Program and erase endurance are the erase endurance of each block. If the program and erase endurance are
n times (n=100,1,000,10,000), each block can be erased n times. For example, if a 2-Kbyte block A is erased
after writing 1 word data 1024 times, each to different addresses, this is counted as one program and erasure.
However, data cannot be written to the same address more than once without erasing the block. (Rewrite
disabled)
Note 2: To use the limited number of erasure efficiently, write to unused address within the block instead of rewrite.
Erase block only after all possible address are used. For example, an 8-word program can be written 128 times
before erase is necessary. Maintaining an equal number of erasure between Block A and B will also improve
efficiency. We recommend keeping track of the number of times erasure is used.
Rev.1.00 Nov 01,2004
REJ09B0101-0100Z
Item
page 365 of 402
4 modes (CPU rewrite, standard serial I/O, parallel I/O, CAN I/O)
See Figure 21.2.1 to 21.2.3 Flash Memory Block Diagram
In units of word
Block erase
Program and erase controlled by software command
All user blocks are write protected by bit FMR16.
In addition, the block 0 and block 1 are write protected by bit FMR02.
5 commands
100 times
1,000 times (Option)
100 times 10,000 times (Option)
20 years (Topr = 55°C)
Parallel I/O, standard serial I/O and CAN I/O modes are supported.
21. Flash Memory Version
Specification
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