Chapter 17. Flash Memory Version - Renesas M16C Series Hardware Manual

R8C/11 Group
17. Flash Memory Version
17.1 Overview
The flash memory version has two modes—CPU rewrite and standard serial I/O—in which its flash
memory can be operated on.
Table 17.1 outlines the performance of flash memory version (see "Table 1.1 Performance" for the items
not listed on Table 17.1).
Table 17.1 Flash Memory Version Performance
Item
Flash memory operating mode
Erase block
Method for program
Method for erasure
Program, erase control method
Protect method
Number of commands
Number of program and erasure
ROM code protection
Table 17.2 Flash Memory Rewrite Modes
Flash memory
rewrite mode
Function
User ROM area is rewritten by executing
software commands from the CPU.
EW0 mode: Can be rewritten in any area
EW1 mode: Can be rewritten in the flash
Areas which User ROM area
can be rewritten
Operation Single chip mode
mode
ROM None
programmer
Rev.1.20 Jan 27, 2006
REJ09B0062-0120
2 modes (CPU rewrite and standard serial I/O)
See "Figure 17.1. Flash Memory Block Diagram"
In units of byte
Block erase
Program and erase controlled by software command
Blocks 0 and 1 protected by block 0, 1 program enable bit
5 commands
100 times
Standard serial I/O mode is supported.
CPU rewrite mode
other than the flash memory
memory
page 164 of 204
17. Flash Memory Version
Specification
Standard serial I/O mode
User ROM area is rewritten by using a
dedicated serial programmer.
Standard serial I/O mode 1
: Clock synchronous serial I/O
Standard serial I/O mode 2
: UART
User ROM area
Boot mode
Serial programmer