Usb Dc Electrical Characteristics - Samsung S3C2416 User Manual

ELECTRICAL DATA
V = 3.0 to 3.6V; GND = 0V; Cload = 2uF; unless otherwise specified.
DD
Symbol
V
Supply voltage
DD
V
Differential input sensitivity
DI
V
Differential common mode voltage
CM
V
Low level input voltage
IL
V
High level input voltage
IH
V
Low level output voltage
OL
V
High level output voltage
OH
I
Tri-state leakage current
LZ
Cin Transceiver capacitance
R
Pull down resistance on pins DP/DM
PD
R
Pull up resistance on DP
PU
Z
Driver output impedance
DRV
Z
Input impedance
INP
Termination voltage for upstream port
V
TERM
pull up
Symbol
VDD_RTC Output supply voltage
V DC input logic high
IH
V DC input logic low
IL
I High level input current
IH
I Low level input current
IL
26-6
Table 26-6. USB DC Electrical Characteristics
Parameter
Table 26-7. RTC OSC DC Electrical Characteristics
Parameter
Conditions
RL = 1.5KΩ to +3.6V
RL = 15KΩ to GND
Pin to GND
Enable internal resistors
Enable internal resistor
[1]
Steady-state drive
Min Typ
1.7 2.5
0.7*VDDrtc
-10
-10
S3C2416X RISC MICROPROCESSOR
Min Typ Max
3.0 3.3
0.2
0.8
2.0
2.8
-10
10
1
39
10
3.0
Max
3.6
0.3*VDDrtc
10
10
Unit
3.6 V
V
2.5 V
0.8 V
V
0.3 V
3.6 V
10 uA
10 pF
20 kΩ
2 kΩ
Ω
44
MΩ
3.6 V
Unit
V
V
V
μA
μA