Mobile Dram Controller; Overview - Samsung S3C2416 User Manual

S3C2416X RISC MICROPROCESSOR
6

MOBILE DRAM CONTROLLER

1 OVERVIEW

The S3C2416 Mobile DRAM Controller supports three kinds of memory interface - (Mobile) SDRAM and mobile
DDR and DDR2. Mobile DRAM controller provides 2 chip select signals (2 memory banks), these are used for up
to 2 (mobile) SDRAM banks or 2 mobile DDR banks or 2 DDR2 banks. Mobile DRAM controller can't support 3
kinds of memory interface simultaneous, for example one bank for (mobile) SDRAM and one bank for mobile
DDR.
Mobile DRAM controller has the following features:
Support little endian
•
Mobile DDR SDRAM and (Mobile) SDRAM
•
− Supports 32-bit for SDRAM and 16-bit data bus interface for mDDR and DDR2.
− Address space: up to 128Mbyte
− Supports 2 banks: 2-nCS (chip selection)
− 16-bit Refresh Timer
− Self Refresh Mode support (controlled by power management)
− Programmable CAS Latency
− Provide Write buffer: 8-word size
− Provide pre-charge and active power down mode
− Provide power save mode
− Support extended MRS for mobile DRAM)
♦ DS, TSCR, PASR
DDR2 Features
•
− Support DDR2 having 4-bank architecture, don't support 8-bank architecture.
− Support 16-bit external data bus interface
− Support AL(Additive Latency) 0, don't support posted CAS, it needs EMRS setting.
− Don't support ODT and nDQS function, it needs EMRS setting.
− All other features are same to the features of SDR/mDDR
MOBILE DRAM CONTROLLER
6-1