Electrical Characteristics - Samsung S5PC110 Manual

Risc microprocessor
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S5PC110_UM
1.3 D.C. ELECTRICAL CHARACTERISTICS
The entire DC characteristics listed in
currents.
Use these parameters to determine maximum DC loading and to determine maximum transition times for a given
load.
shows the DC operating conditions for the high- and low-strength input, output, and I/O pins.
Table 1-3
VDD = 1.65V~3.60V, Tj = -25 to 85°C (Junction temperature)
Parameter
Vtol
Tolerant external voltage**
Vih
LVCMOS Interface
Low Level Input Voltage
Vil
LVCMOS Interface
ΔV
Hysteresis Voltage
Input Buffer
Iih
Input Buffer with pull-down
Input Buffer
Iil
Input Buffer with pull-up
Voh
Output high voltage
Vol
Output Low voltage
Tri-State Output Leakage
Ioz
Current
CIN
Input capacitance
COUT
Output capacitance
NOTE:
1.
The values of Ioh & Iol are valid only for 3.3V range.
2.
The value of IOH and IOL is for min. driver strength.
for each pin include input sense levels, output drive levels, and
Table 1-3
Table 1-3
I/O DC Electrical Characteristics
Condition
VDD Power Off
VDD
Power
On
High Level Input Voltage
High Level Input Current
Vin=VDD
(VDD=min)
Low Level Input Current
Vin=VSS (Vss=min)
(2)
Driver Strength
(2)
Driver Strength
Vout=VSS or VDD
Any input and
Bidirectional buffers
Any output buffer
Minimum
VDD=3.
3V
VDD=1.
8V
0.7VDD
0
0.1VDD
-10
(1)
45
-10
0.8xVDD
-10
1 ELECTRICAL DATA
Typical
Maximum
3.6
3.6
3.6
VDD
0.3VDD
10
10
(1)
-45
0.2xVDD
10
5
5
Unit
V
V
V
V
V
uA
uA
uA
uA
V
V
uA
pF
pF
1-6

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