Memory Interface Timing Constants (Sdram) - Samsung S3C2416 User Manual

S3C2416X RISC MICROPROCESSOR
(VDDi = 1.3V± 0.05V (400MHz), VDDi = 1.3 V± 0.05V (266MHz), T
133MHz, CL = 15pF)
Parameter
SDRAM Address Delay
SDRAM Chip Select Delay
SDRAM Row active Delay
SDRAM Column active Delay
SDRAM Byte Enable Delay
SDRAM Write enable Delay
SDRAM read Data Setup time
SDRAM read Data Hold time
SDRAM output Data Delay
SDRAM Clock Enable Delay
NOTE: If CL increases over the 15pF, operation conditions follow the guide table
Load Capacitance (CL)
15 pF < CL < 20 pF
Table 26-11. Memory Interface Timing Constants (SDRAM)
< 15 pF
= -40 to 85°C, VDD_SDRAM = 1.8V ± 0.1V,
A
Symbol
t
SAD
t
SCSD
t
SRD
t
SCD
t
SBED
t
SWD
t
SDS
t
SDH
t
SDD
t
CKED
Bus clock
133MHz
100MHz
ELECTRICAL DATA
Min Max
1.65 4.25
1.62 3.84
1.70 3.86
1.68 3.93
1.63 4.31
1.63 3.74
1.50 -
1.50 -
1.57 4.61
1.69 4.02
Voltage
1.8V± 0.1V
Unit
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
26-25