C. Electrical Characteristics - Samsung S3C2416 User Manual

ELECTRICAL DATA
3 D.C. ELECTRICAL CHARACTERISTICS
V = 1.7V~3.60V, Vext = 3.0~5.5V , T
DD
Parameter
Tolerant external
Vtol
voltage**
High Level Input Voltage
Vih
LVCMOS Interface
Low Level Input Voltage
Vil
LVCMOS Interface
ΔV Hysteresis Voltage
High Level Input Current
Input Buffer
Tolerant Input
Buffer**
Iih Input Buffer with
pull-down
Tolerant Input
Buffer with pull-up**
Low Level Input Current
Input Buffer
Iil
Input Buffer with
pull-up
Voh Type A,B,C
Vol Type A,B,C
Tri-State Output
Ioz
Leakage Current
C Input capacitance
IN
C
Output capacitance
OUT
NOTE: **specification is only available on tolerant cells.
Driver Type A, B, C : Refer to DC currents table of output driver.
The specification is basically referred to JEDEC JESD8 standard and have extended interface voltage range of
1.7V~3.6V The specification can be changed depending on interface voltage
26-4
Table 26-4. Normal I/O PAD DC Electrical Characteristics
= -40 to 85°C
A
Condition
VDD Power Off
VDD Power On
Vin=VDD
Vin=Vext
Vin=VDD
Vin=5V
Vin=3.3V
Vin=3.3V
Vin=VSS
Vin=VSS
Ioh=-100uA
Iol=100uA
Vout=VSS or VDD
Any input and Bidirectional
buffers
Any output buffer
Min
VDD=3.3V
VDD=2.5V
VDD=1.8V
0.7VDD
-0.3
0.1VDD
-10
-10
VDD=3.3V 20
VDD=2.5V 10
VDD=1.8V 5
VDD=3.3V 10
VDD=2.5V 6
VDD=1.8V 2
-10
VDD=3.3V -130
VDD=2.5V -80
VDD=1.8V -40
VDD-0.2
-10
S3C2416X RISC MICROPROCESSOR
Typ Max
3.6
5.5
5.5
3.6
VDD+0.3
0.3VDD
10
10
70 130
40 80
20 40
30 60
16 50
8 18
10
-70 -20
-40 -10
-20 -5
0.2
10
5
5
Unit
V
V
V
V
V
uA
uA
uA
uA
uA
uA
V
V
uA
pF
pF