Flash Memory; Flash Memory Performance - Renesas M16C/60 Series Hardware Manual

Under development
This document is under development and its contents are subject to change.
M16C/6N5 Group

Flash Memory

Flash Memory Performance

The flash memory version is functionally the same as the mask ROM version except that it internally
contains flash memory.
The flash memory version has four modes — CPU rewrite mode, standard serial I/O mode, parallel I/O
mode and CAN I/O mode — in which its internal flash memory can be operated on.
Table 1.22.1 shows the outline performance of flash memory version (refer to "Table 1.1.1 Performance
outline of M16C/6N5 Group" for the items not listed in Table 1.22.1). Table 1.22.2 shows the outline of
flash memory rewrite mode.
Table 1.22.1 Flash Memory Version Specifications
Item
Flash memory operating mode
Erase block User ROM area Refer to "Figure 1.22.1 Flash Memory Block Diagram"
division Boot ROM area 1 block (4 Kbytes) (Note 1)
Method for program
Method for erasure
Program, erase control method
Protect method
Number of commands
Number of program and erasure (Note 3) 100 times
ROM code protect ion
Note 1: The boot ROM area contains a standard serial I/O mode and CAN I/O mode rewrite control program which is stored in
it when shipped from the factory. This area can only be rewritten in parallel I/O mode.
Note 2: Can be programmed in byte units in only parallel I/O mode.
Note 3: Definition of programming and erasure times
The programming and erasure times are defined to be per-block erasure times. For example, assume a case where a
4K-byte block A is programmed in 2,048 operations by writing one word at a time and erased thereafter. In this case, the
block is reckoned as having been programmed and erased once.
If a product is guaranteed of 100 times of programming and erasure, each block in it can be erased up to 100 times.
Table 1.22.2 Flash Memory Rewrite Modes Overview
Flash memory CPU rewrite mode
rewrite mode
Function
The user ROM area is
rewritten by executing
software commands
from the CPU.
EW0 mode:
Can be rewritten in any
area other than the flash
memory (Note 2)
EW1 mode:
Can be rewritten in the
flash memory
Areas which User ROM area
can be rewritten
Operation Single chip mode
mode Memory expansion mode
Boot mode (EW0 mode)
ROM None
programmer
Note 1: The PM13 bit remains set to "1" while the FMR01 bit in the FMR0 register = 1 (CPU rewrite mode enabled). The PM13
bit is reverted to its original value by setting the FMR01 bit to "0" (CPU rewrite mode disabled). However, if the PM13 bit
is changed during CPU rewrite mode, its changed value is not reflected until after the FMR01 bit is set to "0".
Note 2: When in CPU rewrite mode, the PM10 and PM13 bits in the PM1 register are set to "1". The rewrite control program can
only be executed in the internal RAM or in an external area that is enabled for use when the PM13 bit = 1.
Note 3: When using the standard serial I/O mode 2, make sure a main clock input oscillation frequency is set to 5 MHz, 10 MHz
or 16 MHz .
Rev.1.00 2003.05.30 page 258
4 modes (CPU rewrite, standard serial I/O, parallel I/O, CAN I/O)
In units of word, in units of byte (Note 2)
Collective erase, block erase
Program and erase controlled by software command
Protected for each block by lock bit
8 commands
Parallel I/O , standard serial I/O and CAN I/O modes are supported.
Standard serial I/O
(Note 1) mode
The user ROM area is
rewritten by using a
dedicated serial pro-
grammer.
Standard serial I/O mode 1:
Clock synchronous
serial I/O
Standard serial I/O mode 2:
UART (Note 3)
User ROM area
Boot mode
(EW0 mode)
Serial programmer
Specifications
Parallel I/O mode
The boot ROM and user The user ROM area is
ROM areas are rewrit- rewritten by using a
ten by using a dedicated dedicated CAN pro-
parallel programmer. grammer.
User ROM area User ROM area
Boot ROM area
Parallel I/O mode Boot mode
Parallel programmer CAN programmer
Flash Memory
CAN I/O mode