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M16C/62P Group (M16C/62P, M16C/62PT)
Table 23.52 Flash Memory Version Electrical Characteristics
S y m b o l
-
Program and Erase Endurance
-
W o r d P r o g r a m T i m e ( V
-
L o c k B i t P r o g r a m T i m e
-
B l o c k E r a s e T i m e
( V
= 5 . 0 V , T
C C 1
-
E r a s e A l l U n l o c k e d B l o c k s T i m e
t
F l a s h M e m o r y C i r c u i t S t a b i l i z a t i o n W a i t T i m e
P S
-
D a t a H o l d T i m e
Table 23.53 Flash Memory Version Electrical Characteristics
for 10,000 cycle products (Block A and Block 1
S y m b o l
-
P r o g r a m a n d E r a s e E n d u r a n c e
-
Word Program Time (V
-
Lock Bit Program Time
-
Block Erase Time
(V
=5.0V, T
CC1
t
Flash Memory Circuit Stabilization Wait Time
P S
-
Data Hold Time
NOTES :
1. Referenced to V
2. n denotes the number of block erases.
3. Program and Erase Endurance refers to the number of times a block erase can be performed.
If the program and erase endurance is n (n=100, 1,000, or 10,000), each block can be erased n times.
For example, if a 4 Kbytes block A is erased after writing 1 word data 2,048 times, each to a different address, this
counts as one program and erase endurance. Data cannot be written to the same address more than once without
erasing the block. (Rewrite prohibited)
4. Maximum number of E/W cycles for which operation is guaranteed.
= -40 to 85 °C (T version) / -40 to 125 °C (V version).
5. T
opr
6. Referenced to V
7. Table 23.53 applies for block A or block 1 program and erase endurance > 1,000. Otherwise, use Table 23.52.
8. To reduce the number of program and erase endurance when working with systems requiring numerous rewrites,
write to unused word addresses within the block instead of rewrite. Erase block only after all possible addresses are
used. For example, an 8-word program can be written 256 times maximum before erase becomes necessary.
Maintaining an equal number of erasure between block A and block 1 will also improve efficiency. It is important to
track the total number of times erasure is used.
9. Should erase error occur during block erase, attempt to execute clear status register command, then block erase
command at least three times until erase error disappears.
10. Set the PM17 bit in the PM1 register to "1" (wait state) when executing more than 100 times rewrites (B7 and U7).
11. Customers desiring E/W failure rate information should contact their Renesas technical support representative.
Table 23.54 Flash Memory Version Program/Erase Voltage and Read Operation Voltage Characteristics
(at T
Flash Program, Erase Voltage
V
=5.0 ± 0.5 V
CC1
R
e
. v
2
3 .
0
S
e
p
0
, 1
2
0
0
4
R
E
J
0
9
B
0
1
8
5
0 -
2
3
0
Z
P a r a m e t e r
(3)
= 2 5 ° C )
= 5 . 0 V , T
C C 1
o p r
4-Kbyte block
= 2 5 ° C )
o p r
8-Kbyte block
32-Kbyte block
64-Kbyte block
( 2 )
( 5 )
P a r a m e t e r
( 3 , 8 , 9 )
=5.0V, T
=25°C)
CC1
opr
=25 °C)
4-Kbyte block
opr
(5)
= 0 to 60 °C unless otherwise specified.
=4.5 to 5.5V at T
CC1
opr
= -40 to 85 °C (T version) / -40 to 125 °C (V version) unless otherwise specified.
= 4.0 to 5.5V at T
CC1
opr
o
= 0 to 60
C)
opr
page 316
f o
3
6
4
23. Electrical Characteristics (M16C/62PT)
(1)
M i n .
100
10
(6)
(7)
) (B7, U7)
Min.
( 4 )
1 0 , 0 0 0
10
Flash Read Operation Voltage
V
=4.0 to 5.5 V
CC1
for 100 cycle products (B, U)
Standard
Typ.
M a x .
2 5
2 0 0
2 5
2 0 0
0 . 3
4
0 . 3
4
0 . 5
4
0 . 8
4
4 X n
1 5
Standard
Typ.
Max.
25
25
0.3
15
Unit
cycle
µ s
µ s
s
s
s
s
s
µ s
year
Unit
cycle
µs
µs
s
µs
year
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