Fillmemory Command - NXP Semiconductors freescale KV4 Series Reference Manual

Table of Contents

Response: The target (Kinetis Flashloader ) will return a GenericResponse packet with

one of following error status codes.

Table 14-22. FlashEraseRegion Response Status Codes

kStatus_Success (0x0)

kStatus_MemoryRangeInvalid (0x10200)

kStatus_FlashAlignmentError (0x101)

kStatus_FlashAddressError (0x102)

kStatus_FlashAccessError (0x103)

kStatus_FlashProtectionViolation (0x104)

kStatus_FlashCommandFailure (0x105)

14.2.6.5 FillMemory command

The FillMemory command fills a range of bytes in memory with a data pattern. It follows

the same rules as the WriteMemory command. The difference between FillMemory and

WriteMemory is that a data pattern is included in FillMemory command parameter, and

there is no data phase for the FillMemory command, while WriteMemory does have a

Table 14-23. Parameters for FillMemory Command

• To fill with a byte pattern (8-bit), the byte must be replicated 4 times in the 32-bit

• To fill with a short pattern (16-bit), the short value must be replicated 2 times in the

32-bit pattern.

For example, to fill a byte value with 0xFE, the word pattern would be 0xFEFEFEFE; to

fill a short value 0x5AFE, the word pattern would be 0x5AFE5AFE.

Special care must be taken when writing to flash.

• First, any flash sector written to must have been previously erased with a

FlashEraseAll or FlashEraseRegion command.

Freescale Semiconductor, Inc.

Start address of memory to fill

Number of bytes to write with the pattern

• The start address should be 32-bit aligned.

• The number of bytes must be evenly divisible by 4.

32-bit pattern

KV4x Reference Manual, Rev. 2, 02/2015

Chapter 14 Kinetis Flashloader