Read 1S Section Command - NXP Semiconductors freescale KV4 Series Reference Manual

Do not attempt to read a flash block while the flash memory module is running a
command (FSTAT[CCIF] = 0) on that same block. The flash memory module may return
invalid data to the MCU with the collision error flag (FSTAT[RDCOLERR]) set.
Flash data must be in the erased state before being
programmed. Cumulative programming of bits (adding more
zeros) is not allowed.

32.4.10.1 Read 1s Section Command

The Read 1s Section command checks if a section of program flash memory is erased to
the specified read margin level. The Read 1s Section command defines the starting
address and the number of double-phrases to be verified.
Table 32-45. Read 1s Section Command FCCOB Requirements
FCCOB Number
0
1
2
3
4
5
6
1. Must be double-phrase aligned (Flash address [3:0] = 0000).
Upon clearing CCIF to launch the Read 1s Section command, the flash memory module
sets the read margin for 1s according to
the specified section of flash memory. If the flash memory module fails to read all 1s
(that is, the flash section is not erased), FSTAT[MGSTAT0] is set. FSTAT[CCIF] sets
after the Read 1s Section operation completes.
Table 32-46. Margin Level Choices for Read 1s Section
Read Margin Choice
0x00
0x01
0x02
Freescale Semiconductor, Inc.
CAUTION
FCCOB Contents [7:0]
0x01 (RD1SEC)
Flash address [23:16] of the first double-phrase to be verified
Flash address [15:8] of the first double-phrase to be verified
1
Flash address [7:0] of the first double-phrase to be verified
Number of double-phrases to be verified [15:8]
Number of double-phrases to be verified [7:0]
Read-1 Margin Choice
Table 32-46
Margin Level Description
Use the 'normal' read level for 1s
Apply the 'User' margin to the normal read-1 level
Apply the 'Factory' margin to the normal read-1 level
KV4x Reference Manual, Rev. 2, 02/2015
Preliminary
Chapter 32 Flash Memory Module (FTFA)
and then reads all locations within
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