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22.1
Features
The H8S/2633 Series has 256 kbytes of on-chip flash memory. The features of the flash memory
are summarized below.
• Four flash memory operating modes
Program mode
Erase mode
Program-verify mode
Erase-verify mode
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Block erase (in single-block units) can
be performed. To erase the entire flash memory, each block must be erased in turn. Block
erasing can be performed as required on 4 kbytes, 32 kbytes, and 64 kbytes blocks.
• Programming/erase times
The flash memory programming time is 10 ms (typ.) for simultaneous 128-byte programming,
equivalent to 78 µs (typ.) per byte, and the erase time is 100 ms (typ.).
• Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
• On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
Boot mode
User program mode
• Automatic bit rate adjustment
With data transfer in boot mode, the LSI's bit rate can be automatically adjusted to match the
transfer bit rate of the host.
• Flash memory emulation in RAM
Flash memory programming can be emulated in real time by overlapping a part of RAM onto
flash memory.
• Protect modes
There are three protect modes, hardware, software, and error protection, which allow protected
status to be designated for flash memory program/erase/verify operations.
• Programmer mode
Flash memory can be programmed/erased in programmer mode, using a PROM programmer,
as well as in on-board programming mode.
Section 22 ROM
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