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25.6
Flash Memory Characteristics
Table 25-14 Flash Memory Characteristics
Conditions: V
= 3.0 V to 3.6 V, AV
CC
+75°C (regular specifications), T
Item
Programming time*
1,
3,
5
Erase time*
*
*
Number of rewrites
Programming Wait time after SWE1 bit setting*
Wait time after PSU1 bit setting*
Wait time after P1 bit setting*
Wait time after P1 bit clearing*
Wait time after PSU1 bit clearing*
Wait time after PV1 bit setting*
Wait time after H'FF dummy write*
Wait time after PV1 bit clearing*
Maximum number of writes*
Common
Wait time after SWE1 bit clearing*
Erasing
Wait time after SWE1 bit setting*
Wait time after ESU1 bit setting*
Wait time after E1 bit setting*
Wait time after E1 bit clearing*
Wait time after ESU1 bit clearing*
Wait time after EV1 bit setting*
Wait time after H'FF dummy write*
Wait time after EV1 bit clearing*
Maximum number of erases*
Notes: 1. Follow the program/erase algorithms when making the time settings.
2. Programming time per 128 bytes. (Indicates the total time during which the P1 bit is set
in flash memory control register 1 (FLMCR1). Does not include the program-verify
time.)
916
1,
2,
4
*
*
= 4.5 V to 5.5 V, V
CC
= –40°C to +85°C (wide-range specifications)
a
Symbol Min
t
P
t
E
N
WEC
1
x0
1
y
1,
4
z0
*
z1
z2
α
1
β
1
γ
1
ε
1
η
1
1,
4
*
N1
N2
1
x1
1
x
1
y
1,
5
z
*
α
1
β
1
γ
1
ε
1
η
1
1,
5
N
*
= AV
= 0 V, T
SS
SS
a
Typ
Max
—
10
200
—
100
1000
—
—
100
1
—
—
50
—
—
—
—
30
—
—
10
—
—
200
5
—
—
5
—
—
4
—
—
2
—
—
2
—
—
—
—
6
—
—
994
100
—
—
1
—
—
100
—
—
—
—
10
10
—
—
10
—
—
6
—
—
2
—
—
4
—
—
—
—
100
= –20°C to
Unit
ms/128 bytes
ms/block
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
Times
µs
µs
µs
ms
µs
µs
µs
µs
µs
Times
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