9.4.10 Tms320C6211/C6711 Seamless Data Access; Burst Reads To 2 Pages Of Sdram - Texas Instruments TMS320C6201 Reference Manual

Tms320c6000 series peripherals

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9.4.10 TMS320C6211/C6711 Seamless Data Access

Figure 9–28. Burst Reads to 2 Pages of SDRAM

Since the 'C6211/C6711 performs data transfers to SDRAM in bursts of 4

words and can maintain up to 4 open pages in a single CE space, this device

is capable of sustaining seamless data transfer to and from multiple pages of

SDRAM. Figure 9–28 shows an example of the 'C6211/C6711 performing two

consecutive burst reads to different pages in a single CE space. The first page

is opened with an ACTV command and after a delay controlled by T

read burst begins to bank 0. Since a 4 word burst is done by default, the

'C6211/C6711 takes advantage of the extra cycles by issuing an ACTV com-

mand to open bank 1 while the first read burst takes place. When the first read

burst is scheduled to end, the read burst to bank 1 is issued such that the 3

cycle CAS latency forces data to continue uninterrupted.

External Memory Interface

SDRAM Interface

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