Flash Memory Characteristics - Renesas H8 Series Hardware Manual

8-bit single-chip microcomputer
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16.8.6

Flash Memory Characteristics

Table 16.26 Flash Memory Characteristics
Condition:
AV
= 2.7 V to 5.5 V, V
CC
operating voltage when reading), V
when programming/erasing), T
when programming/erasing: product with regular specifications, product with wide-
range temperature specifications)
Item
Programming time *
1
*
2
*
4
1
3
5
Erase time *
*
*
Reprogramming count
Data retain period
Programming
Wait time after
SWE-bit setting *
Wait time after
PSU-bit setting *
Wait time after
P-bit setting *
Wait time after
P-bit clear *
Wait time after
PSU-bit clear *
Wait time after
PV-bit setting *
Wait time after
dummy write *
Wait time after
PV-bit clear *
Wait time after
SWE-bit clear *
Maximum
programming
count *
1
SS
Symbol
t
P
t
E
N
WEC
t
DRP
x
1
y
1
z1
1
*
4
z2
z3
α
1
β
1
γ
1
ε
1
η
1
θ
1
N
*
4
*
5
Section 16 Electrical Characteristics
= AV
= 0.0 V, V
SS
CC
= 3.0 V to 5.5 V (range of operating voltage
CC
= –20°C to +75°C (range of operating temperature
a
Values
Min
Typ
Max
7
200
100
1200
1000 *
8
10000 *
9
10 *
10
1
50
28
30
32
198
200
202
8
10
12
5
5
4
2
2
100
1000
Rev. 7.00 Mar 10, 2005 page 523 of 652
= 2.7 V to 5.5 V (range of
Test
Unit
Conditions
ms/128 bytes
ms/block
times
year
µs
µs
1 ≤ n ≤ 6
µs
7 ≤ n ≤ 1000
µs
µs
Additional
programming
µs
µs
µs
µs
µs
µs
times
REJ09B0042-0700

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