Rom Interface; Asynchronous Static Memory And Variable Latency I/O Capabilities - Intel PXA255 Developer's Manual

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Memory Controller
Table 6-25
Table 6-25. Asynchronous Static Memory and Variable Latency I/O Capabilities
Device
MSCx[RTx]
Type
Non-burst
000
ROM or
Flash
001
SRAM
Burst-of-4
ROM or
010
Flash (non-
burst writes)
Burst-of-8
ROM or
011
Flash
(non-burst
writes)
Variable
100
Latency I/O
6.7.4

ROM Interface

The processor provides programmable timing for both burst and non-burst ROMs. The RDF field
in MSCx is the latency (in memory clock cycles) for the first, and all subsequent, data beats from
non-burst ROMs, and the first data beat from a burst ROM. RDN is the latency for the burst data
beats after the first for burst ROMs. RRR delays the following access to a different memory space
to allow time for the current ROM to three-state the data bus.
RRR must be programmed with the maximum t
For hardware reset initialization values, refer to
address space corresponding to nCS0 is accessed. The processor supports a ROM burst size of 1, 4,
or 8 by configuring the MSCx[RTx] register bits to 0, 2 or 3 respectfully.
6-50
provides a comparison of supported Asynchronous Static Memory types.
Burst
Read
nOE
Address
Assert
Assert
RDF+1
RDF+1
RDF+1
RDF+1
RDF+1
RDF+1
(0,4)
(0,4)
RDN+1
RDN+1
(1:3,5:7)
(1:3,5:7)
RDF+1
RDF+1
(0)
(0)
RDN+1
RDN+1
(1:7)
(1:7)
RDF+
RDF+1+
RDN+2+waits
waits
Timing (Memory Clocks)
Burst
Burst
Write
nOE
Address
Deassert
Assert
0
N/A
0
RDN+2
0
N/A
0
N/A
RDF+
RDN+2
RDN+2+waits
value, as specified by the ROM manufacturer.
OFF
Section
6.8. MSC0[15:0] is selected when the
Intel® PXA255 Processor Developer's Manual
Burst
nWE
nWE
Assert
De-
assert
RDF+1
N/A
RDN+1
1
RDF+1
N/A
RDF+1
N/A
RDF+1+
RDN+2
waits

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