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Appendix O: Advanced Applications
Test description
The rdson10 test measures the drain-to-source resistance of a saturated MOSFET. Using the
user-input parameter values shown in
rdson10 is executed:
1.
Applies 2 V to the gate (Vg) to saturate the MOSFET.
2.
Applies 3 V to the drain (Vd1) and performs 10 current measurements.
3.
Averages the 10 current readings to yield a single reading (Id1).
4.
Applies 5 V to the drain (Vd2) and performs 10 more current measurements.
5.
Averages the 10 current readings to yield a single reading (Id2).
6.
Calculates the drain-to-source resistance (rdson10) as follows:
7.
Rdson10 = (Vd2-Vd1) / (Id2-Id1)
O-22
Figure
O-31, the MOSFET is tested as follows when
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Model 4200-SCS Reference Manual
4200-901-01 Rev. S / May 2017
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