Keithley 4200-SCS Reference Manual page 1675

Model 4200-SCS Reference Manual
SE Command
SnL Command
SnS Command
SnW Command
SnR Command
SnK Command
parlib user library reference
The parlib extracts device parameters on bipolar-junction transistors and MOSFETs. Extracted
parameters include Beta, resistance, threshold voltage, and Vds-Id sweeps and Vgs-Id sweeps for
MOSFETs.
Table N-4
parlib user modules
User module
beta
fnddat
fndtrg
gamma
gm
gummel
igvg
vceic
vdsid
vgsid1
vtext
4200-901-01 Rev. S / May 2017
Used to query over heat.
Used to query set point for preset #n.
n = 1 to 8
Used to query set temperature for program set point #n.
n = 1 to 8
Used to query program set #n window value.
n = 1 to 8
Used to query program set #n ramp time.
n = 1 to 8
Used to query program set #n dwell time.
n = 1 to 8
Description
Measure beta of bipolar transistor at the specified
IE and VCB.
Find data based on an x search or a y search.
Decide if TRIGL or TRIGH should be used.
Returns the value of the body-effect parameter
gamma obtained from two measurements of the
threshold voltage at different substrate bias
voltages.
Estimate FET conductance (dId/dVg) at Vds and
Vgs.
This test makes measurements that are similiar
to the gummel test in the default project for
3-terminal pnp BJTs.
This test makes measurements that are similiar
to the ig-vg test in the default project for
4-terminal MOSFETs.
This test makes measurements that are similiar
to the vce-ic test in the default project for
3-terminal BJTs.
This test makes measurements that are similiar
to the vds-id test in the default project for
4-terminal MOSFETs.
This test makes measurements that are similiar
to the vgs-id test in the default project for
4-terminal MOSFETs.
Returns the value of the extrapolated threshold
voltage from multiple linear least square fits to the
gate characteristics of a FET in the nonsaturated
region.
Return to Section Topics
Appendix N: Additional User Libraries
N-15