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S530 Parametric Test System Test Subroutine Library User’s Manual S530-907-01 Rev. A / September 2015 *PS53090701A* S530-907-01A A Greater M easure of Confidence A T ektr onix Company...
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Any unauthorized reproduction, photocopy, or use of the information herein, in whole or in part, without the prior written approval of Keithley Instruments is strictly prohibited. All Keithley Instruments product names are trademarks or registered trademarks of Keithley Instruments. Other brand names are trademarks or registered trademarks of their respective holders.
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Table of Contents General information ....................1-1 Introduction .......................... 1-1 Manual contents ........................1-1 Contact information ......................1-1 Using the test subroutine library ................2-1 How to use the library reference ..................2-1 Categorized subroutine lists ....................2-2 Bipolar subroutines ........................2-3 Resistors, diodes, capacitors, and special structure subroutines ..........
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Table of Contents S530 Parametric Test System Test Subroutine Library User's Manual isubmx ............................. 3-46 kdelay ............................3-47 leak ............................3-48 logstp ............................3-49 rcsat ............................3-50 re ............................. 3-53 res ............................3-55 res2 ............................3-56 res4 ............................3-57 resv ............................3-58 rvdp ............................
The S530 Test Subroutine Library (PARLib) is a parameter extraction and data analysis software system. The PARLib subroutines are used to analyze data associated with S530 parametric tests. This manual contains detailed descriptions of the S530 PARLib subroutines. It is intended as a reference guide for experienced users.
Section 2 Using the test subroutine library In this section: How to use the library reference ..........2-1 Categorized subroutine lists ............. 2-2 How to use the library reference The subroutines in the Test subroutine library reference (on page 3-1) are in the C programming language.
Section 2: Using the test subroutine library S530 Parametric Test System Test Subroutine Library User's Manual Details: Additional information about using the subroutine. Figure 3: Example details V/I polarities: The polarities of the current or voltage flow between the pins of the device; based on whether you are using an NPN or PNP transistor.
S530 Parametric Test System Test Subroutine Library User's Manual Section 2: Using the test subroutine library Bipolar subroutines Subroutine Description Link beta1 Calculate DC at specified I beta1 (on page 3-1) and V beta2 Calculate DC and V beta2...
Section 2: Using the test subroutine library S530 Parametric Test System Test Subroutine Library User's Manual Resistors, diodes, capacitors, and special structure subroutines Subroutine Description Link bkdn Measure breakdown voltage (force I, bkdn (on page 3-9) measure V) Measure two-terminal capacitance...
S530 Parametric Test System Test Subroutine Library User's Manual Section 2: Using the test subroutine library FET and JFET subroutines Subroutine Description Link (on page 3-34) Estimate MESFET transconductance at V idss idss (on page 3-43) Estimate MESFET I and V...
Section 3 Test subroutine library reference In this section: Subroutine descriptions ............3-1 Subroutine descriptions beta1 This subroutine calculates the DC beta () of a test device at constant emitter current (I ) and collector-base bias ). The device is in the common-base configuration. Usage double beta1(int e, int b, int c, int sub, double ie, double vcb, char type);...
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual V/I polarities The polarities of V and I are determined by device type. Source-measure units (SMUs) SMU1: Forces V , default current limit ...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference beta2 This subroutine calculates beta () and base-emitter voltage (V ) at a specified collector current (I ) and collector-emitter bias (V Usage double beta2(int e, int b, int c, int sub, double ice, double vce, double *vbeout, double *icout, char type);...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = beta2 (e, b, c, sub, ice, vce, &vbeout, &icout, type); Schematic beta2a This subroutine calculates beta () at collector-base voltage (V ) and collector-emitter current (I...
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details This subroutine is a revised version of the beta2 (on page 3-3) subroutine that uses the LPTLib searchi and trig functions to search I until the target I is reached.
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual beta3a This subroutine calculates beta () at collector-emitter voltage (V ) and collector-emitter current (I ) using the searchi and trig LPTLib functions to search base-emitter current (I ) until the target I is reached.
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Source-measure units (SMUs) SMU1: Forces V , maximum current limit, triggers on I SMU2: Searches I , 3 V voltage limit SMU3: Forces V...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual bice This subroutine sweeps the emitter-base voltage (V ), measures the resulting collector-emitter current (I ), and calculates beta ()at each value of V for a bipolar transistor. The device is connected in the common-emitter configuration.
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = bice(e, b, c, sub, vce, vbe1, vbe2, vsub, npts, ice_last, &beta_last, &beta_max, &ic_max); Schematic bkdn This subroutine forces a current and measures breakdown voltage on a two-terminal device.
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = bkdn(hi, lo, sub, ipgm, vlim); Schematic bvcbo This subroutine forces a collector current (I ) and measures the collector-base breakdown voltage (V ) with the emitter open.
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = bvcbo(e, b, c, sub, ipgm, vlim, type); Schematic bvcbo1 This subroutine uses the bsweepv LPTLib function to measure collector-base breakdown voltage at a specified current with the emitter open.
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Details This subroutine sweeps the collector-base voltage from vcbstart to vcbstop while monitoring the collector current with the emitter open. When the programmed current level (ipgm) is reached, the last collector-base voltage increment is returned as BVCBO1.
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference bvceo This subroutine measures the collector-emitter breakdown voltage (V ) when the collector current (I ) is forced with the base terminal left open. Usage double bvceo(int e, int b, int c, int sub, double ipgm, double vlim, char type);...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual bvceo2 This subroutine measures collector-emitter breakdown voltage using the bsweepV LPTLib function. Usage double bvceo2(int e, int b, int c, int sub, double vcemin, double vcemax, int nstep, double ipgm, double udelay, char type);...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = bvceo2(e, b, c, sub, vcemin, vcemax, nstep, ipgm, udelay, type); Schematic bvces This subroutine measures the collector-emitter/base breakdown voltage by forcing a collector current (I Usage double bvces(int e, int b, int c, int sub, double ipgm, double vlim, char type);...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs) , programmed voltage limit, measures bvces SMU1: Forces I Example resu1t = bvces(e, b, c, sub, ipgm, vlim, type); Schematic bvces1 This subroutine measure the collector-emitter breakdown voltage using the bsweepV LPTLib function.
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details This subroutine sweeps the collector-emitter voltage from vcemin to vcemax while monitoring the collector current with the base shorted to the emitter. When the programmed current level (ipgm) is reached, the last collector-emitter voltage increment is returned as bvces1.
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Details This subroutine measures the drain-to-source breakdown voltage of a field-effect transistor (FET) with the gate grounded with the source, at a specified current (magnitude and polarity).
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference bvdss1 This subroutine measures the drain-source breakdown voltage using the bsweepv LPTLib function. Usage double bvdss1 (int d, int g, int s, int sub, double vdsmin, double vdsmax, int nstep, double ipgm, double udelay, char type);...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = bvdss1(d, g, s, sub, vdsmin, vdsmax, nstep, ipgm, udelay, type); Schematic bvebo This subroutine measures emitter-base breakdown voltage at a specified current with the collector open.
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Source-measure units (SMUs) , programmed voltage limit, measures bvebo SMU1: Forces I Example result = bvebo(e, b, c, sub, ipgm, vlim, type); Schematic This subroutine measures the capacitance of a two-terminal device.
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = cap(hi, lo, sub, vbias); Schematic 3-22 S530-907-01 Rev. A / September 2015...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference deltl1 This subroutine estimates MOSFET gate length reduction (L) using transconductance (g ) data obtained from the vtext2 subroutine for two different transistors. Usage double deltl1(int d1, int g1, int s1, int sub1, double l1, int d2, int g2, int s2,...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs) See the vtext2 (on page 3-76) subroutine. Example Result = deltl1(d1, g1, s1, sub1, l1, d2, g2, s2, sub2, l2, vlow, vhigh, vds, vbs, ithr, vstep, npts, &kflag)
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details W is calculated using the following equation: L = ((Slope / Slope ) / (Slope /Slope - 1.0) The npts parameter must be greater than 5. If a value less than 5 is used, the subroutine uses 5 points by default.
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Details This subroutine estimates the forward early voltage of a bipolar device at constant IBE. The device is connected in the common-emitter configuration, and a collector-emitter voltage (VCE) and collector- emitter current (ICE) data set is generated.
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference fimv This subroutine forces a current and measures a voltage on a device with four high (source) pins and four ground pins. This is an alternate version of the fvmi subroutine.
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual fnddat This subroutine searches an array and returns a new array. Usage void fnddat(double *x, int npts, double *y, int npts1, double x1, double x2, double...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference fndtrg This subroutine determines which native mode trigger to use. Usage int fndtrg(double low, double high) Input The low value high Input The high value...
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs) SMU1: Forces voltage, default current limit, measures current Example result = fvmi(h1, h2, h3, h4, l1, l2, l3, l4, v, &i);...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference gamma1 This subroutine returns the value of the body effect parameter gamma obtained from two measurements of the threshold voltage (V ) at different substrate bias voltages (V...
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs) See the vtext2 (on page 3-76) subroutine. Example result = gamma1(d, g, s, sub, vlow, vhigh, vds, vbs1, vbs2, phip, ithr, vstep, npts, &kflag)
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details This subroutine calculates the drain conductance (g ) at drain-source voltage (V ), gate-source voltage (V ), and substrate bias voltage (V ) for a MOSFET.
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual This subroutine estimates transconductance of a metal-semiconductor field-effect transistor (MESFET) at a specified drain voltage (V ) and gate voltage (V Usage double gm(int d, int g, int s, int sub, double vds, double idlim, double vgs,...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = gm(d, g, s, sub, vds, idlim, vgs, vgstep, iglim, &iflag) Schematic ibic1 This subroutine measures collector current (I ) and base current (I ) and calculates beta () at a fixed collector...
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual V/I polarities NPN +V , +V , and -V PNP -V , -V , and -V Source-measure units (SMUs) SMU1: Forces vce, maximum current limit, measures ice ...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference icbo This subroutine measures leakage when the collector-base junction is reverse-biased (common base). Usage double icbo(int e, int b, int c, int sub, double vcbo, double vsub)
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = icbo(e, b, c, sub, vcbo, vsub) Schematic iceo This subroutine measures collector-emitter leakage at collector voltage (V ) and substrate bias (V...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = iceo(e, b, c, sub, vce, vsub) Schematic ices This subroutine measures collector-emitter/base leakage when the collector-base junction is reverse-biased (common base). Usage...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs) SMU1: Forces vces, default current limit, measures ices SMU2: Forces vsub, default current limit Example result = ices(e, b, c, sub, vces, vsub)
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference V/I polarities N-channel +V , +V , -V P-channel -V , -V , +V Source-measure units (SMUs) SMU1: Forces vds, default current limit, measures I ...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual idsat This subroutine measures drain-source current (I ) at a specified drain-source voltage (V ) and substrate-source voltage (V ). The gate is tied to the drain.
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference idss This subroutine estimates the saturated drain current (I ) and saturation voltage (V ) at forced drain voltage DSAT ) for a metal-semiconductor field effect transistor (MESFET).
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = idss(d, g, s, sub, vdss, idlim, f, &idsat, &vdsat) Schematic iebo This subroutine measures the reverse-bias leakage current through the emitter-base diode of a bipolar transistor with the base grounded and collector terminal floating.
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = iebo(e, b, c, s, vebo, vsub) Schematic idvsvg This subroutine measures drain-source current (I ) when gate-source voltage (V ) is swept and drain-source...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs) SMU1: Forces vds, maximum current limit, measures IDS SMU2: Sweeps V , maximum current limit SM3: Forces vbs, default current limit Example idvsvg(d, g, s, sub, vlow, vhigh, vds, vbs, npts, &id, &vg);...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details This subroutine measures the substrate current when the gate voltage (V ) is swept with V held constant. Maximum current measured is returned as the function result. The gate voltage at maximum current is also returned.
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Details This subroutine provides an appropriate delay time for a current source to reach a specified voltage by using an equation that accounts for the system capacitance, leakage currents, and number of pins to which the source is connected.
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = leak(hi, lo, sub, v, ilim) Schematic logstp This subroutine creates an array using logarithmic steps. Usage int logstp(double xstart, double xstop, double *steps, int npts)
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual rcsat This subroutine estimates the collector resistance (R ) modeling parameter when collector current (I ) and base current (I ) are swept at a constant beta ().
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Make sure the collector current range selected is not near the bend in the I curve (knee region of the curve). If operated within this region, the rcsat subroutine may return negative or unpredictable results.
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = rcsat(e, b, c, sub, ice1, ice2, beta, vsub, npts, &r, &iflag) Schematic 3-52 S530-907-01 Rev. A / September 2015...
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference This subroutine estimates emitter resistance (R Usage double re(int e, int b, int c, int sub, double ib1, double ib2, double vsub, int npts, int *iflag, double *r)
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual The I versus V curve has a flyback region where V decreases as I increases (the curve has a negative slope). The re subroutine drops all points with a negative slope in its calculation of the emitter resistance.
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference This subroutine calculates the resistance of a two-terminal resistor (force I, measure V). Usage double res(int hi, int lo, int sub, double itest) Input The HI pin of the device...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual res2 This subroutine measures two-terminal resistance with a voltage limit. Usage double res2(int hi, int lo, int sub, double itest, double vlim) Input The HI pin of the device...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference res4 This subroutine measures the resistance of a four-terminal resistor. Usage double res4(int his, int him, int los, int lom, int sub, double itest) Input...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual resv This subroutine measures two-terminal resistance (force V, measure I). Usage double resv(int hi, int lo, int sub, double v) Input The HI pin of the device...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference rvdp This subroutine makes a four-terminal van der Pauw measurement. Usage double rvdp(int pin1, int pin2, int pin3, int pin4, int sub, double itest, double...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = rvdp(pin1, pin2, pin3, pin4, sub, itest, &ratio) Schematic tdelay This subroutine calculates the delay time, in seconds, for the number of pins, current, and voltage specified as input parameters.
= 34.52 farads per cm and is the oxide dielectric constant Calculations assume that CMTR1 is a Keithley Instruments Model 9125 1 MHz capacitance meter. ) is forced with a current limit of 1 μA, and the resulting Before T...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual vbes This subroutine measures base-emitter voltage of a bipolar transistor. Usage double vbes(int e, int b, int c, int sub, double ipgm, char type) Input...
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = vbes(e, b, c, sub, ipgm, type) Schematic This subroutine measures the forward biased junction voltage of a diode when a current is forced.
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = vf(hi, lo, sub, itest) Schematic This subroutine measures gate-source voltage (V ) at a specified drain current (I ), drain voltage (V...
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details Drain voltage is forced and a binary search is done on V , starting with the two input values of V (vglo and vghi). The binary search is controlled by two parameters: The error estimate (errpct) and the maximum number of iterations (maxitr).
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual vgsat This subroutine measures saturated threshold voltage (V ) of a field-effect transistor (FET) at a specified GSAT drain-source current (I Usage double vgsat(int d, int g, int s, int sub, double ipgm, double vlim, double vsub)
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = vgsat(d, g, s, sub, ipgm, vlim, vsub) Schematic This subroutine estimates the voltage at which the current flow between the source and drain is blocked ("pinched-off") for a metal-semiconductor field-effect transistor (MESFET) at a specified drain voltage and fraction...
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Details This subroutine estimates the "pinch-off" voltage for a MESFET at a specified drain voltage and fraction of I . First, it measures I , and then searches for a gate voltage that achieves a targeted "pinch-off current"...
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference This subroutine estimates the voltage at which the current flow between the source and drain is blocked ("pinched-off") for a metal-semiconductor field-effect transistor (MESFET) at a specified "pinch-off" current and...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example vp1(d, g, s, sub, ids, vdlim, vg1, vg2, iglim, &iflag, &vp) Schematic vt14 This subroutine estimates the extrapolated threshold voltage (V ) of a metal-oxide field-effect transistor (MOSFET) using a simple two-point technique.
S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference vtext This subroutine estimates the extrapolated gate-source threshold voltage of a metal-oxide field-effect transistor (MOSFET). Usage double vtext(int d, int g, int s, int sub, char type, double vlow, double vhigh,...
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Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual The steps used by this technique to find the maximum slope or maximum g (where V step size is a user-input variable): 1. From the last point below ithr (threshold I ), measure four points (I ).
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = vtext(d, g, s, sub, type, vlow, vhigh, vds, vbs, ithr, vstep, nmax, &slope, &kflag) Schematic S530-907-01 Rev. A / September 2015 3-75...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual vtext2 This subroutine estimates the extrapolated gate-source threshold voltage of a metal-oxide field-effect transistor (MOSFET) using a modified version of the vtext subroutine method. Usage...
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference The procedural differences are: A binary search on V is done to find I (vstart) Calculate sweep limits: The vlow parameter = vstart ...
Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual vtext3 This subroutine estimates the extrapolated gate-source threshold voltage of a metal-oxide field-effect transistor (MOSFET) using a condensed version of the vtext and vtext2 subroutine method.
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S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Source-measure units (SMUs) See the idvsvg (on page 3-45) subroutine. Example vtext3(d, g, s, sub, vg1, vg2, vds, vbs, npts, &slope, &vt, &flag); S530-907-01 Rev. A / September 2015...
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