Keithley S530 User Manual
Keithley S530 User Manual

Keithley S530 User Manual

Parametric test system
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S530 Parametric Test System
Test Subroutine Library User's Manual
S530-907-01 Rev. A / September 2015
*PS53090701A*
S530-907-01A
A Greater M easure of Confidence
A T ektr onix Company

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Summary of Contents for Keithley S530

  • Page 1 S530 Parametric Test System Test Subroutine Library User’s Manual S530-907-01 Rev. A / September 2015 *PS53090701A* S530-907-01A A Greater M easure of Confidence A T ektr onix Company...
  • Page 2 Any unauthorized reproduction, photocopy, or use of the information herein, in whole or in part, without the prior written approval of Keithley Instruments is strictly prohibited. All Keithley Instruments product names are trademarks or registered trademarks of Keithley Instruments. Other brand names are trademarks or registered trademarks of their respective holders.
  • Page 3: Safety Precautions

    Keithley Instruments products are designed for use with electrical signals that are measurement, control, and data I/O connections, with low transient overvoltages, and must not be directly connected to mains voltage or to voltage sources with high transient overvoltages.
  • Page 4 (note that selected parts should be purchased only through Keithley Instruments to maintain accuracy and functionality of the product). If you are unsure about the applicability of a replacement component, call a Keithley Instruments office for information.
  • Page 5: Table Of Contents

    Table of Contents General information ....................1-1 Introduction .......................... 1-1 Manual contents ........................1-1 Contact information ......................1-1 Using the test subroutine library ................2-1 How to use the library reference ..................2-1 Categorized subroutine lists ....................2-2 Bipolar subroutines ........................2-3 Resistors, diodes, capacitors, and special structure subroutines ..........
  • Page 6 Table of Contents S530 Parametric Test System Test Subroutine Library User's Manual isubmx ............................. 3-46 kdelay ............................3-47 leak ............................3-48 logstp ............................3-49 rcsat ............................3-50 re ............................. 3-53 res ............................3-55 res2 ............................3-56 res4 ............................3-57 resv ............................3-58 rvdp ............................
  • Page 7: General Information

    The S530 Test Subroutine Library (PARLib) is a parameter extraction and data analysis software system. The PARLib subroutines are used to analyze data associated with S530 parametric tests. This manual contains detailed descriptions of the S530 PARLib subroutines. It is intended as a reference guide for experienced users.
  • Page 8: Using The Test Subroutine Library

    Section 2 Using the test subroutine library In this section: How to use the library reference ..........2-1 Categorized subroutine lists ............. 2-2 How to use the library reference The subroutines in the Test subroutine library reference (on page 3-1) are in the C programming language.
  • Page 9: Categorized Subroutine Lists

    Section 2: Using the test subroutine library S530 Parametric Test System Test Subroutine Library User's Manual  Details: Additional information about using the subroutine. Figure 3: Example details  V/I polarities: The polarities of the current or voltage flow between the pins of the device; based on whether you are using an NPN or PNP transistor.
  • Page 10: Bipolar Subroutines

    S530 Parametric Test System Test Subroutine Library User's Manual Section 2: Using the test subroutine library Bipolar subroutines Subroutine Description Link beta1 Calculate DC  at specified I beta1 (on page 3-1) and V beta2 Calculate DC and V beta2...
  • Page 11: Resistors, Diodes, Capacitors, And Special Structure Subroutines

    Section 2: Using the test subroutine library S530 Parametric Test System Test Subroutine Library User's Manual Resistors, diodes, capacitors, and special structure subroutines Subroutine Description Link bkdn Measure breakdown voltage (force I, bkdn (on page 3-9) measure V) Measure two-terminal capacitance...
  • Page 12: Fet And Jfet Subroutines

    S530 Parametric Test System Test Subroutine Library User's Manual Section 2: Using the test subroutine library FET and JFET subroutines Subroutine Description Link (on page 3-34) Estimate MESFET transconductance at V idss idss (on page 3-43) Estimate MESFET I and V...
  • Page 13: Test Subroutine Library Reference

    Section 3 Test subroutine library reference In this section: Subroutine descriptions ............3-1 Subroutine descriptions beta1 This subroutine calculates the DC beta () of a test device at constant emitter current (I ) and collector-base bias ). The device is in the common-base configuration. Usage double beta1(int e, int b, int c, int sub, double ie, double vcb, char type);...
  • Page 14 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual V/I polarities The polarities of V and I are determined by device type. Source-measure units (SMUs)  SMU1: Forces V , default current limit ...
  • Page 15: Beta2

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference beta2 This subroutine calculates beta () and base-emitter voltage (V ) at a specified collector current (I ) and collector-emitter bias (V Usage double beta2(int e, int b, int c, int sub, double ice, double vce, double *vbeout, double *icout, char type);...
  • Page 16: Beta2A

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = beta2 (e, b, c, sub, ice, vce, &vbeout, &icout, type); Schematic beta2a This subroutine calculates beta () at collector-base voltage (V ) and collector-emitter current (I...
  • Page 17 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details This subroutine is a revised version of the beta2 (on page 3-3) subroutine that uses the LPTLib searchi and trig functions to search I until the target I is reached.
  • Page 18: Beta3A

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual beta3a This subroutine calculates beta () at collector-emitter voltage (V ) and collector-emitter current (I ) using the searchi and trig LPTLib functions to search base-emitter current (I ) until the target I is reached.
  • Page 19 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Source-measure units (SMUs)  SMU1: Forces V , maximum current limit, triggers on I  SMU2: Searches I , 3 V voltage limit  SMU3: Forces V...
  • Page 20: Bice

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual bice This subroutine sweeps the emitter-base voltage (V ), measures the resulting collector-emitter current (I ), and calculates beta ()at each value of V for a bipolar transistor. The device is connected in the common-emitter configuration.
  • Page 21: Bkdn

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = bice(e, b, c, sub, vce, vbe1, vbe2, vsub, npts, ice_last, &beta_last, &beta_max, &ic_max); Schematic bkdn This subroutine forces a current and measures breakdown voltage on a two-terminal device.
  • Page 22: Bvcbo

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = bkdn(hi, lo, sub, ipgm, vlim); Schematic bvcbo This subroutine forces a collector current (I ) and measures the collector-base breakdown voltage (V ) with the emitter open.
  • Page 23: Bvcbo1

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = bvcbo(e, b, c, sub, ipgm, vlim, type); Schematic bvcbo1 This subroutine uses the bsweepv LPTLib function to measure collector-base breakdown voltage at a specified current with the emitter open.
  • Page 24 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Details This subroutine sweeps the collector-base voltage from vcbstart to vcbstop while monitoring the collector current with the emitter open. When the programmed current level (ipgm) is reached, the last collector-base voltage increment is returned as BVCBO1.
  • Page 25: Bvceo

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference bvceo This subroutine measures the collector-emitter breakdown voltage (V ) when the collector current (I ) is forced with the base terminal left open. Usage double bvceo(int e, int b, int c, int sub, double ipgm, double vlim, char type);...
  • Page 26: Bvceo2

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual bvceo2 This subroutine measures collector-emitter breakdown voltage using the bsweepV LPTLib function. Usage double bvceo2(int e, int b, int c, int sub, double vcemin, double vcemax, int nstep, double ipgm, double udelay, char type);...
  • Page 27: Bvces

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = bvceo2(e, b, c, sub, vcemin, vcemax, nstep, ipgm, udelay, type); Schematic bvces This subroutine measures the collector-emitter/base breakdown voltage by forcing a collector current (I Usage double bvces(int e, int b, int c, int sub, double ipgm, double vlim, char type);...
  • Page 28: Bvces1

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs)  , programmed voltage limit, measures bvces SMU1: Forces I Example resu1t = bvces(e, b, c, sub, ipgm, vlim, type); Schematic bvces1 This subroutine measure the collector-emitter breakdown voltage using the bsweepV LPTLib function.
  • Page 29: Bvdss

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details This subroutine sweeps the collector-emitter voltage from vcemin to vcemax while monitoring the collector current with the base shorted to the emitter. When the programmed current level (ipgm) is reached, the last collector-emitter voltage increment is returned as bvces1.
  • Page 30 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Details This subroutine measures the drain-to-source breakdown voltage of a field-effect transistor (FET) with the gate grounded with the source, at a specified current (magnitude and polarity).
  • Page 31: Bvdss1

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference bvdss1 This subroutine measures the drain-source breakdown voltage using the bsweepv LPTLib function. Usage double bvdss1 (int d, int g, int s, int sub, double vdsmin, double vdsmax, int nstep, double ipgm, double udelay, char type);...
  • Page 32: Bvebo

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = bvdss1(d, g, s, sub, vdsmin, vdsmax, nstep, ipgm, udelay, type); Schematic bvebo This subroutine measures emitter-base breakdown voltage at a specified current with the collector open.
  • Page 33: Cap

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Source-measure units (SMUs)  , programmed voltage limit, measures bvebo SMU1: Forces I Example result = bvebo(e, b, c, sub, ipgm, vlim, type); Schematic This subroutine measures the capacitance of a two-terminal device.
  • Page 34 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = cap(hi, lo, sub, vbias); Schematic 3-22 S530-907-01 Rev. A / September 2015...
  • Page 35: Deltl1

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference deltl1 This subroutine estimates MOSFET gate length reduction (L) using transconductance (g ) data obtained from the vtext2 subroutine for two different transistors. Usage double deltl1(int d1, int g1, int s1, int sub1, double l1, int d2, int g2, int s2,...
  • Page 36: Deltw1

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs) See the vtext2 (on page 3-76) subroutine. Example Result = deltl1(d1, g1, s1, sub1, l1, d2, g2, s2, sub2, l2, vlow, vhigh, vds, vbs, ithr, vstep, npts, &kflag)
  • Page 37 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details W is calculated using the following equation: L = ((Slope / Slope ) / (Slope /Slope - 1.0) The npts parameter must be greater than 5. If a value less than 5 is used, the subroutine uses 5 points by default.
  • Page 38 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Details This subroutine estimates the forward early voltage of a bipolar device at constant IBE. The device is connected in the common-emitter configuration, and a collector-emitter voltage (VCE) and collector- emitter current (ICE) data set is generated.
  • Page 39: Fimv

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference fimv This subroutine forces a current and measures a voltage on a device with four high (source) pins and four ground pins. This is an alternate version of the fvmi subroutine.
  • Page 40: Fnddat

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual fnddat This subroutine searches an array and returns a new array. Usage void fnddat(double *x, int npts, double *y, int npts1, double x1, double x2, double...
  • Page 41: Fndtrg

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference fndtrg This subroutine determines which native mode trigger to use. Usage int fndtrg(double low, double high) Input The low value high Input The high value...
  • Page 42 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs)  SMU1: Forces voltage, default current limit, measures current Example result = fvmi(h1, h2, h3, h4, l1, l2, l3, l4, v, &i);...
  • Page 43: Gamma1

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference gamma1 This subroutine returns the value of the body effect parameter gamma obtained from two measurements of the threshold voltage (V ) at different substrate bias voltages (V...
  • Page 44 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs) See the vtext2 (on page 3-76) subroutine. Example result = gamma1(d, g, s, sub, vlow, vhigh, vds, vbs1, vbs2, phip, ithr, vstep, npts, &kflag)
  • Page 45 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details This subroutine calculates the drain conductance (g ) at drain-source voltage (V ), gate-source voltage (V ), and substrate bias voltage (V ) for a MOSFET.
  • Page 46 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual This subroutine estimates transconductance of a metal-semiconductor field-effect transistor (MESFET) at a specified drain voltage (V ) and gate voltage (V Usage double gm(int d, int g, int s, int sub, double vds, double idlim, double vgs,...
  • Page 47: Ibic1

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = gm(d, g, s, sub, vds, idlim, vgs, vgstep, iglim, &iflag) Schematic ibic1 This subroutine measures collector current (I ) and base current (I ) and calculates beta () at a fixed collector...
  • Page 48 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual V/I polarities NPN +V , +V , and -V PNP -V , -V , and -V Source-measure units (SMUs)  SMU1: Forces vce, maximum current limit, measures ice ...
  • Page 49: Icbo

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference icbo This subroutine measures leakage when the collector-base junction is reverse-biased (common base). Usage double icbo(int e, int b, int c, int sub, double vcbo, double vsub)
  • Page 50: Iceo

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = icbo(e, b, c, sub, vcbo, vsub) Schematic iceo This subroutine measures collector-emitter leakage at collector voltage (V ) and substrate bias (V...
  • Page 51: Ices

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = iceo(e, b, c, sub, vce, vsub) Schematic ices This subroutine measures collector-emitter/base leakage when the collector-base junction is reverse-biased (common base). Usage...
  • Page 52: Id1

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs) SMU1: Forces vces, default current limit, measures ices SMU2: Forces vsub, default current limit Example result = ices(e, b, c, sub, vces, vsub)
  • Page 53 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference V/I polarities N-channel +V , +V , -V P-channel -V , -V , +V Source-measure units (SMUs)  SMU1: Forces vds, default current limit, measures I ...
  • Page 54: Idsat

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual idsat This subroutine measures drain-source current (I ) at a specified drain-source voltage (V ) and substrate-source voltage (V ). The gate is tied to the drain.
  • Page 55: Idss

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference idss This subroutine estimates the saturated drain current (I ) and saturation voltage (V ) at forced drain voltage DSAT ) for a metal-semiconductor field effect transistor (MESFET).
  • Page 56: Iebo

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = idss(d, g, s, sub, vdss, idlim, f, &idsat, &vdsat) Schematic iebo This subroutine measures the reverse-bias leakage current through the emitter-base diode of a bipolar transistor with the base grounded and collector terminal floating.
  • Page 57: Idvsvg

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = iebo(e, b, c, s, vebo, vsub) Schematic idvsvg This subroutine measures drain-source current (I ) when gate-source voltage (V ) is swept and drain-source...
  • Page 58: Isubmx

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Source-measure units (SMUs)  SMU1: Forces vds, maximum current limit, measures IDS  SMU2: Sweeps V , maximum current limit  SM3: Forces vbs, default current limit Example idvsvg(d, g, s, sub, vlow, vhigh, vds, vbs, npts, &id, &vg);...
  • Page 59: Kdelay

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details This subroutine measures the substrate current when the gate voltage (V ) is swept with V held constant. Maximum current measured is returned as the function result. The gate voltage at maximum current is also returned.
  • Page 60: Leak

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Details This subroutine provides an appropriate delay time for a current source to reach a specified voltage by using an equation that accounts for the system capacitance, leakage currents, and number of pins to which the source is connected.
  • Page 61: Logstp

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = leak(hi, lo, sub, v, ilim) Schematic logstp This subroutine creates an array using logarithmic steps. Usage int logstp(double xstart, double xstop, double *steps, int npts)
  • Page 62: Rcsat

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual rcsat This subroutine estimates the collector resistance (R ) modeling parameter when collector current (I ) and base current (I ) are swept at a constant beta ().
  • Page 63 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Make sure the collector current range selected is not near the bend in the I curve (knee region of the curve). If operated within this region, the rcsat subroutine may return negative or unpredictable results.
  • Page 64 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = rcsat(e, b, c, sub, ice1, ice2, beta, vsub, npts, &r, &iflag) Schematic 3-52 S530-907-01 Rev. A / September 2015...
  • Page 65 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference This subroutine estimates emitter resistance (R Usage double re(int e, int b, int c, int sub, double ib1, double ib2, double vsub, int npts, int *iflag, double *r)
  • Page 66 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual The I versus V curve has a flyback region where V decreases as I increases (the curve has a negative slope). The re subroutine drops all points with a negative slope in its calculation of the emitter resistance.
  • Page 67: Res

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference This subroutine calculates the resistance of a two-terminal resistor (force I, measure V). Usage double res(int hi, int lo, int sub, double itest) Input The HI pin of the device...
  • Page 68: Res2

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual res2 This subroutine measures two-terminal resistance with a voltage limit. Usage double res2(int hi, int lo, int sub, double itest, double vlim) Input The HI pin of the device...
  • Page 69: Res4

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference res4 This subroutine measures the resistance of a four-terminal resistor. Usage double res4(int his, int him, int los, int lom, int sub, double itest) Input...
  • Page 70: Resv

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual resv This subroutine measures two-terminal resistance (force V, measure I). Usage double resv(int hi, int lo, int sub, double v) Input The HI pin of the device...
  • Page 71: Rvdp

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference rvdp This subroutine makes a four-terminal van der Pauw measurement. Usage double rvdp(int pin1, int pin2, int pin3, int pin4, int sub, double itest, double...
  • Page 72: Tdelay

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = rvdp(pin1, pin2, pin3, pin4, sub, itest, &ratio) Schematic tdelay This subroutine calculates the delay time, in seconds, for the number of pins, current, and voltage specified as input parameters.
  • Page 73: Tox

    = 34.52 farads per cm and is the oxide dielectric constant Calculations assume that CMTR1 is a Keithley Instruments Model 9125 1 MHz capacitance meter. ) is forced with a current limit of 1 μA, and the resulting Before T...
  • Page 74: Vbes

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual vbes This subroutine measures base-emitter voltage of a bipolar transistor. Usage double vbes(int e, int b, int c, int sub, double ipgm, char type) Input...
  • Page 75 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = vbes(e, b, c, sub, ipgm, type) Schematic This subroutine measures the forward biased junction voltage of a diode when a current is forced.
  • Page 76: Vg2

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example result = vf(hi, lo, sub, itest) Schematic This subroutine measures gate-source voltage (V ) at a specified drain current (I ), drain voltage (V...
  • Page 77 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Details Drain voltage is forced and a binary search is done on V , starting with the two input values of V (vglo and vghi). The binary search is controlled by two parameters: The error estimate (errpct) and the maximum number of iterations (maxitr).
  • Page 78: Vgsat

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual vgsat This subroutine measures saturated threshold voltage (V ) of a field-effect transistor (FET) at a specified GSAT drain-source current (I Usage double vgsat(int d, int g, int s, int sub, double ipgm, double vlim, double vsub)
  • Page 79 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = vgsat(d, g, s, sub, ipgm, vlim, vsub) Schematic This subroutine estimates the voltage at which the current flow between the source and drain is blocked ("pinched-off") for a metal-semiconductor field-effect transistor (MESFET) at a specified drain voltage and fraction...
  • Page 80 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Details This subroutine estimates the "pinch-off" voltage for a MESFET at a specified drain voltage and fraction of I . First, it measures I , and then searches for a gate voltage that achieves a targeted "pinch-off current"...
  • Page 81: Vp1

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference This subroutine estimates the voltage at which the current flow between the source and drain is blocked ("pinched-off") for a metal-semiconductor field-effect transistor (MESFET) at a specified "pinch-off" current and...
  • Page 82: Vt14

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual Example vp1(d, g, s, sub, ids, vdlim, vg1, vg2, iglim, &iflag, &vp) Schematic vt14 This subroutine estimates the extrapolated threshold voltage (V ) of a metal-oxide field-effect transistor (MOSFET) using a simple two-point technique.
  • Page 83: Vtati

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference V/I polarities N-channel +V , +V , -V , +I P-channel -V , -V , +V , -I Source-measure units (SMUs) See the vtati subroutine.
  • Page 84 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual V/I polarities N-channel +V , +Vlow, +Vhigh, -V , +I P-channel -V , -Vlow, -Vhigh, +V , -I Source-measure units (SMUs)  SMU1: Force vds, trigger on ithr, default current limit ...
  • Page 85: Vtext

    S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference vtext This subroutine estimates the extrapolated gate-source threshold voltage of a metal-oxide field-effect transistor (MOSFET). Usage double vtext(int d, int g, int s, int sub, char type, double vlow, double vhigh,...
  • Page 86 Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual The steps used by this technique to find the maximum slope or maximum g (where V step size is a user-input variable): 1. From the last point below ithr (threshold I ), measure four points (I ).
  • Page 87 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Example result = vtext(d, g, s, sub, type, vlow, vhigh, vds, vbs, ithr, vstep, nmax, &slope, &kflag) Schematic S530-907-01 Rev. A / September 2015 3-75...
  • Page 88: Vtext2

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual vtext2 This subroutine estimates the extrapolated gate-source threshold voltage of a metal-oxide field-effect transistor (MOSFET) using a modified version of the vtext subroutine method. Usage...
  • Page 89 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference The procedural differences are:  A binary search on V is done to find I (vstart)  Calculate sweep limits: The vlow parameter = vstart ...
  • Page 90: Vtext3

    Section 3: Test subroutine library reference S530 Parametric Test System Test Subroutine Library User's Manual vtext3 This subroutine estimates the extrapolated gate-source threshold voltage of a metal-oxide field-effect transistor (MOSFET) using a condensed version of the vtext and vtext2 subroutine method.
  • Page 91 S530 Parametric Test System Test Subroutine Library User's Manual Section 3: Test subroutine library reference Source-measure units (SMUs) See the idvsvg (on page 3-45) subroutine. Example vtext3(d, g, s, sub, vg1, vg2, vds, vbs, npts, &slope, &vt, &flag); S530-907-01 Rev. A / September 2015...
  • Page 92: Index

    Index arrays • 3-29, 3-51 math math subroutines • 2-5, 3-29, 3-30, 3-49, 3-51, 3- beta • 3-1, 3-3, 3-4, 3-6, 3-8 MESFET • 3-35, 3-44, 3-70, 3-72 bipolar MOSFET bipolar subroutines • 2-3, 3-8, 3-10, 3-11, 3-13, 3- drain conductance • 3-33 14, 3-16, 3-21, 3-36, 3-38, 3-39, 3-40, 3-52, 3- gate length reduction •...
  • Page 93 All other trademarks and trade names are the property of their respective companies. Keithley Instruments Corporate Headquarters • 28775 Aurora Road • Cleveland, Ohio 44139 • 440-248-0400 • Fax: 440-248-6168 • 1-800-935-5595 • www.keithley.com A G r eater Mea sur e of Confi denc e...

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