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Model 4200-SCS Reference Manual
Figure M-13
qbd_rmpj User Module (default parameters)
Input Variables
hi_pin
lo_pin1,lo_pin2,
lo_pin3 (int)
NOTE:
HiSMUId
loSMUId1, 2, 3
v_use
I_init
I_start
4200-901-01 Rev. S / May 2017
(int) High pin (usually the gate pin) (-1 to 72).
Low pins (enter -1 to not connect). low_pin 1, 2, and 3 are usually for
source drain and substrate connection. Depending on device structure,
some of those pins are optional.
If there is no switching matrix in the system, input either 0 or -1 for hi_pin and
lo_pins to bypass switch.
(char *) ID string of the SMU outputting stress.
(char *) ID string of the SMU connected to ground terminal. These three
IDs can be same.
(double) Oxide voltage (V) under normal operating conditions. Typically
the power supply voltage of the process. This voltage is used to measure
pre- and post-voltage ramp oxide current (Ref. JESD35-A).
(double) Oxide breakdown failure current when biased at v_use. Typical
value is 10 uA/cm^2 and may change depending on oxide area. For
maximum sensitivity, the specified value should be well above the worse
case oxide current of a "good" oxide and well above the system noise
floor. Higher values must be specified for ultra-thin oxide because of
direct tunneling effects (Ref. JESD35-A).
(double) Starting current (A) for current ramp. Typical value is I_init
(Ref. JESD35-A).
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Section Topics
Appendix M: WLR Testing
M-15
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