Keithley 4200-SCS Reference Manual page 1648

Semiconductor characterization system
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Appendix M: WLR Testing
EM_const_I project plan
The EM_const_I project plan template is shown in
configured for subsite cycling using current stressing on the single device (Metal_Line).
This project plan includes initialization and termination steps (UTMs) to control the temperature of
the chuck. The subsite plan will not start until the chuck reaches the specified temperature. After
the first pre-stress cycle to perform a characterization test on the device, subsequent cycles
current stress the device for a specified period of time before again performing the test. After the
subsite plan is completed, the UTM for the termination step cools the chuck. The Device Stress
Properties setup window for the EM_const_I project is shown in
The EM_const_I project plan can be modified to test additional devices. Each SMU in the test
system can current-stress one device. Therefore, if there are eight SMUs in the test system, up to
eight SMUs can be stressed, as shown in
NOTE:
Figure M-6
EM_const_I project plan
Figure M-7
Device Stress Properties window: EM_const_I project
M-6
Current stressing: When setting the current stress level for each device in the
subsite plan, a setting of zero (0) connects the device pin to the ground unit (0 V
ground). To current stress a device, the current stress level must be set to a
non-zero value.
Return to
Figure
M-6. The subsite plan (EM) is
Figure
M-8.
Section Topics
Model 4200-SCS Reference Manual
Figure
M-7.
4200-901-01 Rev. S / May 2017

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