ROHS MC9S08QE128 Reference Manual page 82

Chapter 4 Memory
optimization when programming more than one consecutive address on a specific row in the flash array as
the high voltage generation can be kept active in between two programming commands.
An example flow to execute the burst program operation is shown in
command write sequence is as follows:
1. Write to a flash block address to start the command write sequence for the burst program command.
The data written will be programmed to the address written.
2. Write the program burst command, 0x25, to the FCMD register.
3. Clear the FCBEF flag in the FSTAT register by writing a 1 to FCBEF to launch the program burst
command.
4. After the FCBEF flag in the FSTAT register returns to a 1, repeat steps 1 through 3. The address
written is ignored but is incremented internally.
The burst program procedure can be used to program an entire flash array even while crossing row
boundaries within the flash array. However, the burst program command cannot cross array boundaries.
The array boundary for this MCU occurs between extended addresses 0x0FFFF and 0x10000. At least two
burst commands are required to program the entire 128K of flash memory.
If data to be burst programmed falls within a protected area of the flash array, the FPVIOL flag in the
FSTAT register will set and the burst program command will not launch. Once the burst program command
has successfully launched, the FCCF flag in the FSTAT register will set after the burst program operation
has completed unless a new burst program command write sequence has been buffered. By executing a
new burst program command write sequence on sequential addresses after the FCBEF flag in the FSTAT
register has been set, greater than 50% faster programming time for the entire flash array can be effectively
achieved when compared to using the basic program command.
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MC9S08QE128 MCU Series Reference Manual, Rev. 2
Figure 4-18. The burst program
Freescale Semiconductor