ROHS MC9S08QE128 Reference Manual page 80

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Chapter 4 Memory
Clock Register
Written
Check
Command
Buffer Empty Check
Access Error and
Protection Violation
Check
Bit Polling for
Command Completion
Check
Erase Verify
Status
4.6.3.2.2
Program Command
The program operation will program a previously erased address in the flash memory using an embedded
algorithm.
An example flow to execute the program operation is shown in
sequence is as follows:
1. Write to a flash block address to start the command write sequence for the program command. The
data written will be programmed to the address written.
2. Write the program command, 0x20, to the FCMD register.
80
START
Read: FCDIV register
no
FDIVLD
Set?
yes
Write: FCDIV register
Read: FSTAT register
FCBEF
Set?
yes
FACCERR/FPVIOL
Set?
no
Write: Flash Block Address
1.
and Dummy Data
Write: FCMD register
2.
Erase Verify Command 0x05
Write: FSTAT register
3.
Clear FCBEF 0x80
Read: FSTAT register
FCCF
Set?
yes
FBLANK
Set?
yes
Flash Block
EXIT
Erased
Figure 4-16. Example Erase Verify Command Flow
MC9S08QE128 MCU Series Reference Manual, Rev. 2
NOTE: FCDIV needs to
be set after each reset
no
yes
Write: FSTAT register
Clear FACCERR/FPVIOL 0x30
no
no
EXIT
Figure
4-17. The program command write
Flash Block
Not Erased
Freescale Semiconductor

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