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16.7.2 Self-programming function
µ
The
PD70F3116 provides self-programming functions, as shown in Table 16-6. By combining these functions,
erasing/writing flash memory becomes possible.
Type
Erase
Write
Check
Write back
Acquire information
16.7.3 Outline of self-programming interface
To execute self-programming using the self-programming interface, the environmental conditions of the hardware
and software for manipulating the flash memory must be satisfied.
It is assumed that the self-programming interface is used in an assembly language.
(1) Entry program
This program is to call the internal processing of the device.
It is a part of the application program, and must be executed in memory other than the block 0 space and
internal ROM area (flash memory).
(2) Device internal processing
This is manipulation of the flash memory executed inside the device.
This processing manipulates the flash memory after it has been called by the entry program.
(3) RAM parameter
This is a RAM area to which the parameters necessary for self-programming, such as write time and erase
time, are written. It is set by the application program and referenced by the device internal processing.
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CHAPTER 16 FLASH MEMORY (
Table 16-6. Function List
Function Name
Area erase
Continuous write in word units
Pre-write
Erase verify
Erase byte verify
Internal verify
Area write back
Flash memory information read
User's Manual U14492EJ5V0UD
µ
PD70F3116)
Function
Erases the specified area.
Continuously writes the specified memory contents from
the specified flash memory address, for the number of
words specified in 4-byte units.
Writes 0 to flash memory before erasure.
Checks whether an over erase occurred after erasure.
Checks whether erasure is complete.
Checks whether the signal level of the post-write data in
flash memory is appropriate.
Writes back the flash memory area in which an over
erase occurred.
Reads out information about flash memory.
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