Flash Memory Characteristics; Table 22.30 Flash Memory Characteristics - Hitachi H8/3062 Hardware Manual

22.3.6

Flash Memory Characteristics

Table 22.30 shows the flash memory characteristics.

Table 22.30 Flash Memory Characteristics

Conditions: V = 4.5 to 5.5 V, AV
CC
T = 0°C to +75°C (regular specifications), T
a
specifications) (operating temperature range for programming/erasing)
Item
Programming time * 1 * 2 *
1 3 5
Erase time * * *
Reprogramming count
Programming Wait time after SWE bit setting *
Wait time after PSU bit setting *
Wait time after P bit setting *
Wait time after P bit clear *
Wait time after PSU bit clear *
Wait time after PV bit setting *
Wait time after H'FF dummy
write * 1
Wait time after PV bit clear *
Wait time after SWE bit clear *
Maximum programming
count * 1 *
Wait time after SWE bit setting *
Erase
Wait time after ESU bit setting *
Wait time after E bit setting *
Wait time after E bit clear *
Wait time after ESU bit clear *
Wait time after EV bit setting *
Wait time after H'FF dummy
write * 1
Wait time after EV bit clear *
Wait time after SWE bit clear *
Maximum erase count *
= 4.5 to 5.5 V, V
CC
4
1
1
1 * 4
1
1
1
1
1
4
1
1
1 * 5
1
1
1
1
1
1 4
*
= AV = 0 V,
SS SS
= –40°C to 85°C (wide-range
a
Symbol Min Typ
t — 10
P
t — 100
E
N — —
WEC
t 1 1
sswe
t 50 50
spsu
t 28 30
sp30
t 198 200
sp200
t 8 10
sp10
t 5 5
cp
t 5 5
cpsu
t 4 4
spv
t 2 2
spvr
t 2 2
cpv
t 100 100
cswe
N — —
t 1 1
sswe
t 100 100
sesu
t 10 10
se
t 10 10
ce
t 10 10
cesu
t 20 20
sev
t 2 2
sevr
t 4 4
cev
t 100 100
cswe
N 12 —
Max Unit Notes
200 ms/
128 bytes
1200 ms/block
100 Times
— µs
— µs
32 µs Programming
time wait
202 µs Programming
time wait
12 µs Additional-
programming
time wait
— µs
— µs
— µs
— µs
— µs
— µs
1000 Times
— µs
— µs
100 ms Erase time
wait
— µs
— µs
— µs
— µs
— µs
— µs
120 Times
709