Hitachi H8/3062 Hardware Manual page 647

H8/3062F-ZTAT
B-mask version
Notes: *1 Mode pin and FWE pin input must satisfy the mode programming setup time (t
with respect to the reset release timing.
*2 See section 4.2.2, Reset Sequence, and section 19.11, Flash Memory Programming and
Erasing Precautions. The H8/3062F-ZTAT B-mask version requires a minimum of 20
system clock cycles for a reset during operation.
*3 For further information on FWE application and disconnection, see section 19.11,
Flash Memory Programming and Erasing Precautions.
19.5.2 User Program Mode
When set to user program mode, the H8/3062F-ZTAT B-mask version can program and erase its
flash memory by executing a user program/erase control program. Therefore, on-board
reprogramming of the on-chip flash memory can be carried out by providing on-board means of
FWE control and supply of programming data, and storing a program/erase control program in
part of the program area as necessary.
To select user program mode, select a mode that enables the on-chip ROM (mode 5 or 7), and
apply a high level to the FWE pin. In this mode, on-chip supporting modules other than flash
memory operate as they normally would in modes 5 and 7.
Flash memory programming/erasing should not be carried out in mode 6. When mode 6 is set, the
FWE pin must be driven low.
The flash memory itself cannot be read while being programmed or erased, so the program that
performs programming should be placed in external memory or transferred to RAM and executed
there.
Figure 19.9 shows the execution procedure when user program mode is entered during program
execution in RAM. It is also possible to start from user program mode in a reset-start.
CSn
MD2
MD1
MD0
FWE
RES
External
memory,
etc.
System
control
unit
)
MDS
599