18.2.6
Flash Memory Characteristics (Preliminary)
Table 18.8 Flash Memory Characteristics (Preliminary)
V
= 3.0 V to 5.5 V, V
CC
Item
Programming time (per 128 bytes)
Erase time (per block)
Reprogramming count
Programming Wait time after SWE
bit setting
Wait time after PSU
bit setting
Wait time after P bit
setting
Wait time after P bit
clear
Wait time after PSU
bit clear
Wait time after PV
bit setting
Wait time after
dummy write
Wait time after PV
bit clear
Wait time after SWE
bit clear
Maximum
programming count
374
= 0.0 V, T
= –20°C to +75°C, unless otherwise specified.
SS
a
Symbol Condition
t
P
t
E
N
WEC
x
y
z1
z2
z3
α
β
γ
ε
η
θ
N
Test
Min
—
—
—
1
50
1 ≤ n ≤ 6
28
7 ≤ n ≤ 1000
198
Additional-
8
programming
5
5
4
2
2
100
—
Values
Typ
Max
Unit
7
—
ms
100
—
ms
—
100
Times
—
—
µs
—
—
µs
30
32
µs
200
202
µs
10
12
µs
—
—
µs
—
—
µs
—
—
µs
—
—
µs
—
—
µs
—
—
µs
—
1000
Times
Notes
1, 2, 4
1, 3, 6
1
1
1, 4
1
1
1
1
1
1
1, 4, 5