Differences From H8/3062F-Ztat And H8/3062F-Ztat R-Mask Version; Table 18.2 Differences From H8/3062F-Ztat And H8/3062F-Ztat R-Mask Version - Hitachi H8/3062 Hardware Manual

18.1.1

Differences from H8/3062F-ZTAT and H8/3062F-ZTAT R-Mask Version

Table 18.2 Differences from H8/3062F-ZTAT and H8/3062F-ZTAT R-Mask Version

Item
Size
Operating frequency
Program/erase voltage
Programming Programming
unit
Write pulse
application
method
Erasing Block
configuration
EBR
configuration
RAM RAM area
emulation
Applicable
blocks
RAMCR
configuration
Flash error FLER bit
Flash Wait after
memory SWE clearing
characteristics
Boot mode Bit rate
Boot area
User area
PROM mode
Notes: *1 See section 18.6, Flash Memory Programming/Erasing, for details of the H8/3064F-
ZTAT B-mask version program/erase algorithms.
*2 See section 22.3.6, Flash Memory Characteristics, for details of the H8/3064F-ZTAT B-
mask version flash memory characteristics.
524
H8/3062F-ZTAT,
H8/3062F-ZTAT R-Mask Version
128 kbytes
1 to 20 MHz
Supplied from V
CC
32-byte simultaneous programming
150 µs × 4 + 500 µs × 399
8 blocks
1 kbyte × 4, 28 kbytes × 1,
32 kbytes × 3
EBR: H'EE032
7 6 5 4 3
EB7 EB6 EB5 EB4 EB3
1 kbyte (H'FF000 to H'FF3FF)
EB0 to EB3
RAMCR: H'EE077
7 6 5 4 3
— — — — RAMS
FLMSR: H'EE07D
7 6 5 4 3
FLER — — — —
—
9,600 bps, 4,800 bps
H'FFEF20 to H'FFF3FF
H'FFF400 to H'FFFF1F
Use of PROM writer supporting Hitachi
microcomputer device type with 128
kbytes on-chip flash memory
H8/3064F-ZTAT B-Mask Version
256 kbytes
2 to 25 MHz
Supplied from V
128-byte simultaneous programming
30 µs × 6 + 200 µs × 994
(with 10 µs additional programming) *
12 blocks
4 kbytes × 8, 32 kbytes × 1,
64 kbytes × 3
EBR1: H'EE032
2 1 0
7
EB2 EB1 EB0 EB7 EB6
EBR2: H'EE033
7
— —
4 kbytes (H'FE000 to H'FEFFF)
EB0 to EB7
RAMCR: H'EE077
7
2 1 0
—
RAM2 RAM1 —
FLMCR2: H'EE031
7
2 1 0
FLER
— — —
specification must be met *
t
cswe
19,200 bps, 9,600 bps, 4,800 bps
H'FFDF20 to H'FFE71F
H'FFE720 to H'FFFF1F
Use of PROM writer supporting Hitachi
microcomputer device type with 256
kbytes on-chip flash memory
CC
6 5 4 3 2
EB5 EB4 EB3 EB2 EB1
6 5 4 3 2
— — EB11 EB10 EB9
6 5 4 3 2
— — — RAMS RAM2 RAM1
6 5 4 3 2
— — — — —
1
1 0
EB0
1 0
EB8
1 0
RAM0
1 0
— —
2