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Notes: *1 Make each time setting in accordance with the program/program-verify flowchart or
erase/erase-verify flowchart.
*2 Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
memory control register (FLMCR1) is set. It does not include the programming
verification time)
*3 Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
not include the erase verification time)
*4 To specify the maximum programming time (t
flowchart, set the maximum value (1000) for the maximum programming count (N).
The wait time after P bit setting should be changed as follows according to the value of
the programming counter (n).
Programming counter (n) = 1 to 6
Programming counter (n) = 7 to 1000
Programming counter (n) [in additional programming] = 1 to 6 : t
*5 For the maximum erase time (t
wait time after E bit setting (t
t
(max) = Wait time after E bit setting (t
E
To set the maximum erase time, the values of t
the above formula.
Examples: When t
(max)), the following relationship applies between the
E
) and the maximum erase count (N):
se
= 100 [ms], N = 12 times
se
When t
= 10 [ms], N = 120 times
se
(max)) in the 128-byte programming
P
) × maximum erase count (N)
se
and N should be set so as to satisfy
se
: t
= 30 µs
sp30
: t
= 200 µs
sp200
= 10 µs
sp10
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