Flash Memory Characteristics - Hitachi F-ZTAT H8/3039 Series Hardware Manual

18.2.5 Flash Memory Characteristics

Table 18-15 shows the flash memory characteristics.
Table 18-15 Flash Memory Characteristics (1)
Conditions: V
T
a
specifications), T
wide-range specifications)
Item
1, 2, 4
Programming time*
* *
1, 3, 5
Erase time*
* *
Reprogramming count
Wait time after SWE bit setting*
Wait time after PSU bit setting*
Wait time after P bit setting*
Wait time after P bit clear*
Programming Wait time after PSU bit clear*
Wait time after PV bit setting*
Wait time after H'FF dummy write*
Wait time after PV bit clear*
Maximum programming count*
Wait time after SWE bit setting*
Wait time after ESU bit setting*
Wait time after E bit setting*
Erase Wait time after E bit clear*
Wait time after ESU bit clear*
Wait time after EV bit setting*
Wait time after H'FF dummy write*
Wait time after EV bit clear*
Maximum erase count*
Notes: 1. Set the times according to the program/erase algorithms.
2. Programming time per 32 bytes (Shows the total time the flash memory control register (FLMCR) is set. It does
not include the programming verification time.)
3. Block erase time (Shows the period the E bit in FLMCR is set. It does not include the erase verification time.)
4. To specify the maximum programming time (t P (max)) in the 32-byte programming flowchart, set the max value
(403) for the maximum programming count (N).
The wait time after P bit setting (z) should be changed as follows according to the programming counter value.
Programming counter value of 1 to 4 :
Programming counter value of 5 to 403 :
5. For the maximum erase time (t E (max)), the following relationship applies between the wait time after E bit setting
(z) and the maximum erase count (N):
t E (max) = Wait time after E bit setting (z) × maximum erase count (N)
To set the maximum erase time, the values of z and N should be set so as to satisfy the above formula.
Examples:When z = 5 [ms]:
=4.5 V to 5.5V, AV
CC
= 0°C to +75°C (program/erase operating temperature range: regular
= 0°C to +85°C (program/erase operating temperature range:
a
1
1
1, 4
*
1
1
1
1
1,
*
1
1
1, 5
*
1
1
1
1
1, 5
*
N = 60 times
When z = 10 [ms]: N = 30 times
=4.5 V to 5.5V, V
CC
Symbol min
t —
P
t —
E
N —
WEC
x 10
y 50
z 150
α
10
β
10
γ
4
ε
1
2
η
4
4
N —
x 10
y 200
z 5
α
10
β
10
γ
20
ε
1
2
η
5
N 30
z = 150 µs
z = 500 µs
=AV =0V
SS SS
typ max Unit
10 200 ms/32 bytes
100 300 ms/block
— 100 Times
µs
— —
µs
— —
µs
— 500
µs
— —
µs
— —
µs
— —
µs
— —
µs
— —
— 403 Times
µs
— —
µs
— —
— 10 ms
µs
— —
µs
— —
µs
— —
µs
— —
µs
— —
— 60 Times
Test
condition
549