Flash Memory Programming/Erasing - Hitachi H8/3062 Hardware Manual

Single-chip microcomputer h8/3062 series; h8/3062b series; h8/3062f-ztat series; h8/3064f-ztat series

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Flash Memory Programming/Erasing

A software method, using the CPU, is employed to program and erase flash memory in the on-

board programming modes. There are four flash memory operating modes: program mode, erase

mode, program-verify mode, and erase-verify mode. Transitions to these modes are made by

setting the PSU, ESU, P, E, PV, and EV bits in FLMCR.

The state transitions made by the various FLMCR bit settings are shown in figure 17.10. The flash

memory cannot be read while being programmed or erased. Therefore, the program (user

program) that controls flash memory programming/erasing should be located and executed in on-

chip RAM or external memory.

See section 17.9, Flash Memory Programming and Erasing Precautions, for points to note

concerning programming and erasing, and section 22.2.6, Flash Memory Characteristics, for the

wait times after setting or clearing FLMCR bits.

Notes: 1. Operation is not guaranteed if setting/clearing of the SWE, ESU, PSU, EV, PV, E, and

P bits in FLMCR is executed by a program in flash memory.

2. When programming or erasing, set the FWE pin input level to the high level, and set

FWE to 1 (programming/erasing will not be executed if FWE = 0).