Erase Mode; Erase-Verify Mode - Hitachi H8/3062 Hardware Manual

Single-chip microcomputer h8/3062 series; h8/3062b series; h8/3062f-ztat series; h8/3064f-ztat series
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17.5.3

Erase Mode

When erasing flash memory, the single-block erase flowchart shown in figure 17.12 should be
followed.
The wait times (x, y, z, α, ß, γ, ε, η) after bits are set or cleared in the flash memory control
register (FLMCR) and the maximum number of erase operations (N) are shown in table 22.20 in
section 22.2.6, Flash Memory Characteristics.
To erase flash memory contents, make a 1-bit setting for the flash memory area to be erased in
erase block register (EBR) at least (x) µs after setting the SWE bit to 1 in FLMCR. Next, the
watchdog timer (WDT) is set to prevent overerasing due to program runaway, etc. Set a value
greater than ( z ) ms + (y + α + ß) µs as the WDT overflow period. Preparation for entering erase
mode (erase setup) is performed next by setting the ESU bit in FLMCR. The operating mode is
then switched to erase mode by setting the E bit in FLMCR after the elapse of at least (y) µs. The
time during which the E bit is set is the flash memory erase time. Ensure that the erase time does
not exceed (z) ms.
Note: With flash memory erasing, preprogramming (setting all memory data in the memory to
be erased to all 0) is not necessary before starting the erase procedure.
17.5.4

Erase-Verify Mode

In erase-verify mode, data is read after memory has been erased to check whether it has been
correctly erased.
After the elapse of the fixed erase time, clear the E bit in FLMCR, then wait for at least ( α ) µs
before clearing the ESU bit to exit erase mode. After exiting erase mode, the watchdog timer
setting is also cleared. The operating mode is then switched to erase-verify mode by setting the
EV bit in FLMCR. Before reading in erase-verify mode, a dummy write of H'FF data should be
made to the addresses to be read. The dummy write should be executed after the elapse of (y) µs
or more. When the flash memory is read in this state (verify data is read in 16-bit units), the data at
the latched address is read. Wait at least (ε) µs after the dummy write before performing this read
operation. If the read data has been erased (all 1), a dummy write is performed to the next address,
and erase-verify is performed. If the read data is unerased, set erase mode again, and repeat the
erase/erase-verify sequence as before. The maximum number of repetitions of the erase/erase-
verify sequence is indicated by the maximum number of erase operations (N).
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