Flash Memory Characteristics - Hitachi H8/3062 Hardware Manual

22.2.6

Flash Memory Characteristics

Table 22.20 shows the flash memory characteristics.
Table 22.20 Flash Memory Characteristics (1)
Conditions: V = 4.5 to 5.5 V, AV
CC
T = 0 to +75°C (Programming/erasing operating temperature range: regular
a
specification)
T = 0 to +85°C (Programming/erasing operating temperature range: wide-range
a
specification)
Item
1, 2,
Programming time*
*
1, 3, 5
Erase time*
* *
Reprogramming count
Programming Wait time after SWE bit setting*
Wait time after PSU bit setting*
Wait time after P bit setting*
Wait time after P bit clear*
Wait time after PSU bit clear*
Wait time after PV bit setting*
Wait time after H'FF dummy
1
write*
Wait time after PV bit clear*
Maximum programming count*
Erase Wait time after SWE bit setting*
Wait time after ESU bit setting*
Wait time after E bit setting*
Wait time after E bit clear*
Wait time after ESU bit clear*
Wait time after EV bit setting*
Wait time after H'FF dummy
1
write*
Wait time after EV bit clear*
Maximum erase count*
Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
erase/erase-verify flowchart.
2. Programming time per 32 bytes (Shows the total period for which the P-bit in the flash
memory control register (FLMCR) is set. It does not include the programming
verification time.)
684
= 4.5 to 5.5 V, V
CC
4
*
1,
1
1
1
1
1,
*
1
1
1
1
1, 5
*
= AV
SS
Symbol Min
t —
P
t —
E
N —
WEC
1
x 10
1
y 50
4
* z 150
α
10
β
10
γ
4
ε
2
η
4
1, 4
N —
*
1
x 10
1
y 200
5
z 5
α
10
β
10
γ
20
ε
2
η
5
N 120
= 0 V
SS
Typ Max Unit
10 200 ms/
32 bytes
100 1200 ms/block
— 100 Times
— — µs
— — µs
— 500 µs
— — µs
— — µs
— — µs
— — µs
— — µs
— 403 Times
— — µs
— — µs
— 10 ms
— — µs
— — µs
— — µs
— — µs
— — µs
— 240 Times
Test Condition