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18.2
Features
The H8/3064F-ZTAT B-mask version has 256 kbytes of on-chip flash memory.
The features of the flash memory are summarized below.
• Four flash memory operating modes
Program mode
Erase mode
Program-verify mode
Erase-verify mode
• Programming/erase methods
The flash memory is programmed 128 bytes at a time. Erasing is performed in block units. To
erase the entire flash memory, each block must be erased in turn. In block erasing, 4-kbyte, 32-
kbyte, and 64-kbyte blocks can be set arbitrarily.
• Programming/erase times
The flash memory programming time is 10 ms (typ) for simultaneous 128-byte programming,
equivalent approximately to 80 µs (typ) per byte, and the erase time is 100 ms (typ) per block.
• Reprogramming capability
The flash memory can be reprogrammed up to 100 times.
• On-board programming modes
There are two modes in which flash memory can be programmed/erased/verified on-board:
Boot mode
User program mode
• Automatic bit rate adjustment
For data transfer in boot mode, the H8/3064F-ZTAT B-mask version chip's bit rate can be
automatically adjusted to match the transfer bit rate of the host.
• Flash memory emulation in RAM
Flash memory programming can be emulated in real time by overlapping a part of RAM onto
flash memory.
• Protect modes
There are three protect modes—hardware, software, and error—which allow protected status to
be designated for flash memory program/erase/verify operations.
• PROM mode
Flash memory can be programmed/erased in PROM mode, using a PROM programmer, as
well as in on-board programming mode.
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