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18.2.5 Flash Memory Characteristics
Table 18-15 shows the flash memory characteristics.
Table 18-15 Flash Memory Characteristics
Conditions:
V
T
Item
1,
2,
Programming time*
*
1,
3,
5
Erase time*
*
*
Reprogramming count
Programming Wait time after SWE bit setting*
Wait time after PSU bit setting*
Wait time after P bit setting
(additional programming)
Wait time after P bit setting (initial)
Wait time after P bit setting (initial)
Wait time after P bit clear*
Wait time after PSU bit clear*
Wait time after PV bit setting*
Wait time after H'FF dummy write*
Wait time after PV bit clear*
Wait time after SWE bit clear*
Maximum programming count*
Erase
Wait time after SWE bit setting*
Wait time after ESU bit setting*
Wait time after E bit setting*
Wait time after E bit clear*
Wait time after ESU bit clear*
Wait time after EV bit setting*
Wait time after H'FF dummy write*
Wait time after EV bit clear*
Wait time after SWE bit clear*
Maximum erase count*
=3.0 V to 3.6 V, AV
CC
= 0°C to +75°C (program/erase operating temperature range)
a
4
*
1
1
1,
1
1
1,
5
*
=3.6 V to 5.5 V, V
CC
Symbol
Min
t
—
P
t
—
E
N
—
WEC
1
t
1
sswe
1
t
50
spsu
t
8
sp10
t
28
sp30
t
198
sp200
t
5
cp
1
t
5
cpsu
1
t
4
spv
1
t
2
spvr
t
2
cpv
1
t
100
hvcswe
1,
4
N
—
*
1
t
1
sswe
1
t
100
sesu
5
*
t
10
se
t
10
ce
1
t
10
cesu
1
t
20
sev
1
t
2
sevr
t
4
cev
1
t
100
cswe
N
12
=AV
=0V
SS
SS
Typ
Max
Unit
10
200
ms/
128 bytes
100
1200
ms/
block
—
100
Times
µs
1
—
µs
50
—
µs
10
12
µs
30
32
µs
200
202
µs
5
—
µs
5
—
µs
4
—
µs
2
—
µs
2
—
µs
100
—
—
1000
Times
µs
1
—
µs
100
—
10
100
ms
µs
10
—
µs
10
—
µs
20
—
µs
2
—
µs
4
—
µs
100
—
—
120
Times
Comments
531
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