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16.2.6
Flash Memory Characteristics (Preliminary)
Table 16-7 Flash Memory Characteristics (Preliminary)
V
= 3.0 V to 5.5 V, V
CC
Item
Programming time (per 128 bytes)*
Erase time (per block) *
Reprogramming count
Programming Wait time after SWE
bit setting*
Wait time after PSU
bit setting*
Wait time after P bit setting
1
4
*
*
Wait time after P bit clear*
Wait time after PSU bit clear*
Wait time after PV
bit setting*
Wait time after dummy write*
Wait time after PV bit clear*
Wait time after SWE
bit clear*
Maximum
programming count*
= 0.0 V, T
= –20°C to +75°C, unless otherwise specified.
SS
a
Symbol Condition
1
2
4
*
*
t
P
1
3
6
t
*
*
E
N
x
1
y
1
z1
z2
z3
α
1
β
1
γ
1
ε
1
η
1
θ
1
N
1
4
5
*
*
Test
WEC
1 ≤ n ≤ 6
7 ≤ n ≤ 1000
Additional-
programming
Values
Min
Typ
Max
—
7
—
—
100
—
—
—
100
1
—
—
50
—
—
28
30
32
198
200
202
8
10
12
5
—
—
5
—
—
4
—
—
2
—
—
2
—
—
100
—
—
—
—
1000
Rev. 1.0, 03/01, page 219 of 280
Unit
ms
ms
Times
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
µs
Times
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