Keithley 4200-SCS Reference Manual page 135

Model 4200-SCS Reference Manual
Table 6-1 (continued)
KITE projects
Project Folder
_Pulse
(continued)
_Reliability
_Reliability
_Resistivity
_Solar
default
4200-901-01 Rev. S / May 2017
Project
PMU-Switch
PulseIV-Complete
QPulseIV-Complete
EM_const_1
HCI_1_DUT
HCI_4_DUT
HCI_PULSE
NBTI_1_DUT
Qbd
FourPtProbe
vdp_resistivity
SolarCell
default
Return to Section Topics
Section 6: Keithley Interactive Test Environment (KITE)
Description
Provides examples for switching between a 4225-PMU,
4200-SMU, and 4210-CVU to the device under test (DUT)
(see PMU-Switch project).
Uses the 4200-PIV-A package to perform Pulse I-V tests. See
"How to perform a Pulsed I-V test on my device"
of the User Manual.
Uses the 4200-PIV-A package to perform Pulse I-V tests. See
"How to perform a Pulsed I-V test on my device"
of the User Manual and PA-956 (4200-PIV-Q Applications
Note).
Electromigration test of a single device using a 4200-SMU.
Uses subsite cycling. See
see Subsite cycling and "How to perform AC stress for wafer
level reliability (WLR)" in Section 3 of the User Manual.
Hot carrier injection degradation of a single device using
4200-SMUs. Uses subsite cycling. See
subsite cycling, see Subsite cycling
stress for wafer level reliability (WLR)"
Manual.
Same as the HCI_1_DUT
using a switch matrix for connections. Uses subsite cycling.
See Appendix M. For subsite cycling, see
this section) and "How to perform AC stress for wafer level
reliability (WLR)" in Section 3 of the User Manual.
Hot carrier injection degradation of a single device using
4200-SMUs, a pulse generator and Model 707A for switching.
See "How to perform AC stress for wafer level reliability
(WLR)" in Section 3 of the User Manual.
Performs Negative Bias Temperature Instability (NBTI) on a
single 4-terminal MOSFET. Uses 4200-SMUs, a Model 707A
for switching, and provides hot chuck control. See
Appendix M. For subsite cycling, see
section) and "How to perform AC stress for wafer level
reliability (WLR)" in Section 3 of the User Manual.
Uses a 4200-SMU to Perform Ramp V and Ramp J tests. See
V-ramp and J-ramp tests in
Measures resistivity using 4-point collinear probe method with
either three or four 4200-SMUs. See Application Note 2475.
Measures vdp resistivity using four 4200-SMUs. The resistivity
data appears in the subsite. See Application Note 2475.
Uses 4200-SMUs and a 4210-CVU for basic solar cell testing.
Includes tests for I-V sweep, 4-point probe resistivity, van der
Pauw resistivity, C-V sweep, and DLCP. See Application Note
3026.
Common DC I-V and C-V tests for MOSFETs, BJTs, resistors,
diodes, and capacitors. Table 16-17
tests for the 4225-PMU.
in Section 3
in Section 3
Appendix M. For subsite cycling,
Appendix M. For
and "How to perform AC
in Section 3 of the User
project except it tests four devices
Subsite cycling
Subsite cycling
Appendix M.
summarizes the default
(in
(in this
6-9