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Notes: 1. Make each time setting in accordance with the program/program-verify flowchart or
erase/erase-verify flowchart.
2. Programming time per 128 bytes (Shows the total period for which the P-bit in the flash
memory control register (FLMCR1) is set. It does not include the programming
verification time.)
3. Block erase time (Shows the total period for which the E-bit in FLMCR1 is set. It does
not include the erase verification time.)
4. To specify the maximum programming time (t
flowchart, set the maximum value (1000) for the maximum programming count (N).
The wait time after P bit setting should be changed as follows according to the value of
the programming counter (n).
Programming counter (n) = 1 to 6:
Programming counter (n) = 7 to 1000:
Programming counter (n) [in additional programming] = 1 to 6: t
5. For the maximum erase time (t
wait time after E bit setting (t
t
(max) = Wait time after E bit setting (t
E
To set the maximum erase time, the values of t
the above formula.
Examples: When t
E
) and the maximum erase count (N):
se
= 100 [ms], N = 12 times
se
When t
= 10 [ms], N = 120 times
se
(max)) in the 128-byte programming
P
(max)), the following relationship applies between the
) × maximum erase count (N)
se
and N should be set so as to satisfy
se
t
= 30 µs
sp30
t
= 200 µs
sp200
= 10 µs
sp10
729
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