Overview Of Flash Memory (H8/3062F-Ztat, H8/3062F-Ztat R-Mask Version); Features - Hitachi H8/3062 Hardware Manual

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Overview of Flash Memory

(H8/3062F-ZTAT, H8/3062F-ZTAT R-Mask Version)

The features of the flash memory in the H8/3062F-ZTAT and H8/3062F-ZTAT R-mask version

are summarized below.

• Four flash memory operating modes

 Program mode

 Erase mode

 Program-verify mode

 Erase-verify mode

• Programming/erase methods

The flash memory is programmed 32 bytes at a time. Erasing is performed in block units, with

the blocks to be erased specified by setting the corresponding register bits. The flash memory

is divided into three 32-kbyte blocks, one 28-kbyte block, and four 1-kbyte blocks.

• Programming/erase times

The flash memory programming time is 10 ms (typ.) for simultaneous 32-byte programming,

equivalent approximately to 300 µs (typ.) per byte, and the erase time is 100 ms (typ.) per

• Reprogramming capability

The flash memory can be reprogrammed up to 100 times.

• On-board programming modes

There are two modes in which flash memory can be programmed/erased/verified on-board:

 User program mode

• Automatic bit rate adjustment

For data transfer in boot mode, the chip's bit rate can be automatically adjusted to match the

transfer bit rate of the host (9600 or 4800 bps).

• Protect modes

There are three protect modes—hardware, software, and error—which allow protected status to

be designated for flash memory program/erase/verify operations

• Flash memory emulation in RAM

Flash memory programming can be emulated in real time by overlapping a part of RAM onto

flash memory.

Flash memory can be programmed/erased in PROM mode, using a PROM programmer, as

well as in on-board programming mode.