Hitachi H8/3062 Hardware Manual page 745

Table 22.40 Flash Memory Characteristics (2)
Conditions: V = 3.0 to 3.6 V, AV
CC
T = 0°C to +75°C (operating temperature range for programming/erasing)
a
Item
1, 2,
Programming time* *
1, 3, 5
Erase time*
* *
Reprogramming count
Programming Wait time after SWE bit setting*
Wait time after PSU bit setting*
Wait time after P bit setting*
Wait time after P bit clear*
Wait time after PSU bit clear*
Wait time after PV bit setting*
Wait time after H'FF dummy
1
write*
Wait time after PV bit clear*
Wait time after SWE bit clear*
Maximum programming
count*
Erase Wait time after SWE bit setting*
Wait time after ESU bit setting*
Wait time after E bit setting*
Wait time after E bit clear*
Wait time after ESU bit clear*
Wait time after EV bit setting*
Wait time after H'FF dummy
1
write*
Wait time after EV bit clear*
Wait time after SWE bit clear*
Maximum erase count*
730
= 3.0 to 3.6 V, V
CC
4
*
1,
1
1
1, 4
*
1,
1
1
1, 5
*
= AV
SS
Symbol Min
t —
P
t —
E
N —
WEC
1
t 1
sswe
1
t 50
spsu
4
t 28
*
sp30
t 198
sp200
t 8
sp10
t 5
cp
1
t 5
cpsu
1
t 4
spv
t 2
spvr
t 2
cpv
1
t 100
cswe
N —
1
t 1
sswe
1
t 100
sesu
5
t 10
*
se
t 10
ce
1
t 10
cesu
1
t 20
sev
t 2
sevr
t 4
cev
1
t 100
cswe
N 12
— Preliminary —
= 0 V
SS
Typ Max Unit
10 200 ms/
128 bytes
100 1200 ms/block
— 100 Times
1 — µs
50 — µs
30 32 µs
200 202 µs
10 12 µs
5 — µs
5 — µs
4 — µs
2 — µs
2 — µs
100 — µs
— 1000 Times
1 — µs
100 — µs
10 100 ms
10 — µs
10 — µs
20 — µs
2 — µs
4 — µs
100 — µs
— 120 Times
Notes
Programming
time wait
Programming
time wait
Additional-
programming
time wait
Erase time
wait